DESCRIPTION

The NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applications requiring high dynamic range. This device exhibits an outstanding combination of high gain and low intermodulation distortion, as well as low noise figure. The NE461 series offers excellent performance and reliability at low cost through titanium, platinum, gold metallization system and direct nitride passivation of the surface of the chip. Devices are available in a low cost surface mount package (SOT-89) as well as in chip form.

FEATURES

• HIGH DYNAMIC RANGE

• LOW IM DISTORTION: -40 dBc

• HIGH OUTPUT POWER : 27.5 dBm at TYP

• LOW NOISE: 1.5 dB TYP at 500 MHz

• LOW COST