FEATURES

■Fast read access times: 90 ns, 120 ns, 200 ns

■Low power CMOS cissipation:

–Active: 25 mA Max.

–Standby: 100 µA Max.

■Simple write operation:

–On-chip address and data latches

–Self-timed write cycle with auto-clear

■Fast write cycle time: 10ms max

■End of write detection: DATApolling

■Hardware write protection

■CMOS and TTL compatible I/O

■10,000 or 100,000 Program/erase cycles

■10 or 100 year data retention

■Commercial, industrial and automotive temperature ranges