CY7C1461AV33价格

参考价格:¥318.2013

型号:CY7C1461AV33-133AXC 品牌:Cypress 备注:这里有CY7C1461AV33多少钱,2025年最近7天走势,今日出价,今日竞价,CY7C1461AV33批发/采购报价,CY7C1461AV33行情走势销售排行榜,CY7C1461AV33报价。
型号 功能描述 生产厂家&企业 LOGO 操作
CY7C1461AV33

36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

Functional Description[1] The CY7C1461AV33/CY7C1463AV33/CY7C1465AV33 is a 3.3V, 1M x 36/2M x 18/512K x 72 Synchronous Flow -through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1461AV33/CY7C1463AV33/CY

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1461AV33

36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

文件:511.28 Kbytes Page:29 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1461AV33

36 Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

文件:859.69 Kbytes Page:32 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1461AV33

36-Mbit (1 M x 36/2 M x 18/512 k x 72) Flow-Through SRAM with NoBL Architecture

文件:1.07871 Mbytes Page:34 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

Functional Description[1] The CY7C1461AV33/CY7C1463AV33/CY7C1465AV33 is a 3.3V, 1M x 36/2M x 18/512K x 72 Synchronous Flow -through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1461AV33/CY7C1463AV33/CY

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

Functional Description[1] The CY7C1461AV33/CY7C1463AV33/CY7C1465AV33 is a 3.3V, 1M x 36/2M x 18/512K x 72 Synchronous Flow -through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1461AV33/CY7C1463AV33/CY

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

Functional Description[1] The CY7C1461AV33/CY7C1463AV33/CY7C1465AV33 is a 3.3V, 1M x 36/2M x 18/512K x 72 Synchronous Flow -through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1461AV33/CY7C1463AV33/CY

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

Functional Description[1] The CY7C1461AV33/CY7C1463AV33/CY7C1465AV33 is a 3.3V, 1M x 36/2M x 18/512K x 72 Synchronous Flow -through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1461AV33/CY7C1463AV33/CY

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

Functional Description[1] The CY7C1461AV33/CY7C1463AV33/CY7C1465AV33 is a 3.3V, 1M x 36/2M x 18/512K x 72 Synchronous Flow -through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1461AV33/CY7C1463AV33/CY

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

Functional Description[1] The CY7C1461AV33/CY7C1463AV33/CY7C1465AV33 is a 3.3V, 1M x 36/2M x 18/512K x 72 Synchronous Flow -through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1461AV33/CY7C1463AV33/CY

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

Functional Description[1] The CY7C1461AV33/CY7C1463AV33/CY7C1465AV33 is a 3.3V, 1M x 36/2M x 18/512K x 72 Synchronous Flow -through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1461AV33/CY7C1463AV33/CY

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

Functional Description[1] The CY7C1461AV33/CY7C1463AV33/CY7C1465AV33 is a 3.3V, 1M x 36/2M x 18/512K x 72 Synchronous Flow -through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1461AV33/CY7C1463AV33/CY

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

Functional Description[1] The CY7C1461AV33/CY7C1463AV33/CY7C1465AV33 is a 3.3V, 1M x 36/2M x 18/512K x 72 Synchronous Flow -through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1461AV33/CY7C1463AV33/CY

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

Functional Description[1] The CY7C1461AV33/CY7C1463AV33/CY7C1465AV33 is a 3.3V, 1M x 36/2M x 18/512K x 72 Synchronous Flow -through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1461AV33/CY7C1463AV33/CY

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

Functional Description[1] The CY7C1461AV33/CY7C1463AV33/CY7C1465AV33 is a 3.3V, 1M x 36/2M x 18/512K x 72 Synchronous Flow -through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1461AV33/CY7C1463AV33/CY

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

Functional Description[1] The CY7C1461AV33/CY7C1463AV33/CY7C1465AV33 is a 3.3V, 1M x 36/2M x 18/512K x 72 Synchronous Flow -through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1461AV33/CY7C1463AV33/CY

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

文件:511.28 Kbytes Page:29 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36 Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

文件:859.69 Kbytes Page:32 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1 M x 36/2 M x 18/512 k x 72) Flow-Through SRAM with NoBL Architecture

文件:1.07871 Mbytes Page:34 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1 M 횞 36/2 M 횞 18) Flow-Through SRAM with NoBL??Architecture

文件:442.37 Kbytes Page:24 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

文件:511.28 Kbytes Page:29 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36 Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

文件:859.69 Kbytes Page:32 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

文件:511.28 Kbytes Page:29 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36 Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

文件:859.69 Kbytes Page:32 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36 Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

文件:859.69 Kbytes Page:32 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

文件:511.28 Kbytes Page:29 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

文件:511.28 Kbytes Page:29 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36 Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

文件:859.69 Kbytes Page:32 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36 Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

文件:859.69 Kbytes Page:32 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

文件:511.28 Kbytes Page:29 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

文件:511.28 Kbytes Page:29 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36 Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

文件:859.69 Kbytes Page:32 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1 M 횞 36/2 M 횞 18) Flow-Through SRAM with NoBL??Architecture

文件:442.37 Kbytes Page:24 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1 M x 36/2 M x 18/512 k x 72) Flow-Through SRAM with NoBL Architecture

文件:1.07871 Mbytes Page:34 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36 Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

文件:859.69 Kbytes Page:32 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

文件:511.28 Kbytes Page:29 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

封装/外壳:100-LQFP 包装:托盘 描述:IC SRAM 36MBIT PARALLEL 100TQFP 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:100-LQFP 包装:托盘 描述:IC SRAM 36MBIT PARALLEL 100TQFP 集成电路(IC) 存储器

ETC

知名厂家

36-Mbit (1 M 횞 36/2 M 횞 18) Flow-Through SRAM with NoBL??Architecture

文件:442.37 Kbytes Page:24 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1 M x 36/2 M x 18/512 k x 72) Flow-Through SRAM with NoBL Architecture

文件:1.07871 Mbytes Page:34 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

文件:511.28 Kbytes Page:29 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36 Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

文件:859.69 Kbytes Page:32 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36 Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

文件:859.69 Kbytes Page:32 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

文件:511.28 Kbytes Page:29 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

文件:511.28 Kbytes Page:29 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36 Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

文件:859.69 Kbytes Page:32 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36 Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

文件:859.69 Kbytes Page:32 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

文件:511.28 Kbytes Page:29 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36 Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

文件:859.69 Kbytes Page:32 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL??Architecture

文件:511.28 Kbytes Page:29 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1461AV33产品属性

  • 类型

    描述

  • 型号

    CY7C1461AV33

  • 功能描述

    静态随机存取存储器 1Mx36 3.3V NoBL FT 静态随机存取存储器 COM

  • RoHS

  • 制造商

    Cypress Semiconductor

  • 存储容量

    16 Mbit

  • 组织

    1 M x 16

  • 访问时间

    55 ns

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.2 V

  • 最大工作电流

    22 uA

  • 最大工作温度

    + 85 C

  • 最小工作温度

    - 40 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    TSOP-48

  • 封装

    Tray

更新时间:2025-8-7 19:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CYPRESS/赛普拉斯
25+
TQFP-100
32360
CYPRESS/赛普拉斯全新特价CY7C1461AV33-133AXI即刻询购立享优惠#长期有货
CYP
1948+
QFP
6852
只做原装正品现货!或订货假一赔十!
CYPRESS
1231/16+/15+/14+
924
一级代理,专注军工、汽车、医疗、工业、新能源、电力
CYPRESS
2138+
原厂标准封装
8960
代理CYPRESS全系列芯片,原装现货
CYPRESS/赛普拉斯
23+
QFP
98900
原厂原装正品现货!!
CYP
24+
N/A
5650
公司原厂原装现货假一罚十!特价出售!强势库存!
CYPRESS
23+
QFP
28000
原装正品
CYPRESS/赛普拉斯
24+
QFP
12000
原装正品 有挂就有货
Cypress(赛普拉斯)
24+
N/A
9860
原装正品现货支持实单
Cypress(赛普拉斯)
21+
TQFP-100
30000
只做原装,质量保证

CY7C1461AV33数据表相关新闻