CY7C144价格

参考价格:¥547.2085

型号:CY7C1440AV25-167BZXC 品牌:Cynergy 3 备注:这里有CY7C144多少钱,2025年最近7天走势,今日出价,今日竞价,CY7C144批发/采购报价,CY7C144行情走势销售排行榜,CY7C144报价。
型号 功能描述 生产厂家 企业 LOGO 操作
CY7C144

8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy

文件:391.37 Kbytes Page:19 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C144

8K x 8/9 Dual-Port Static RAM with SEM, INT, BUSY

文件:607.9 Kbytes Page:20 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C144

8K x 8/9 Dual-Port Static RAM with SEM, INT, BUSY

Infineon

英飞凌

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C144产品属性

  • 类型

    描述

  • 型号

    CY7C144

  • 功能描述

    静态随机存取存储器 36MB(1Mx36) 2.5v 167MHz Sync 静态随机存取存储器

  • RoHS

  • 制造商

    Cypress Semiconductor

  • 存储容量

    16 Mbit

  • 组织

    1 M x 16

  • 访问时间

    55 ns

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.2 V

  • 最大工作电流

    22 uA

  • 最大工作温度

    + 85 C

  • 最小工作温度

    - 40 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    TSOP-48

  • 封装

    Tray

更新时间:2025-9-24 23:13:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CYPRESS/赛普拉斯
24+
TQFP64
8000
只做原装正品现货
CYPRESS(赛普拉斯)
24+
LQFP-100
5591
百分百原装正品,可原型号开票
CYPRESS
24+
TQFP
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
CYPRESS/赛普拉斯
25+
BGA
102
原装正品,假一罚十!
ADI
23+
BGA
7000
CYPRESS/赛普拉斯
21+
TQFP64
9080
只做原装,质量保证
CYPRESS
2138+
原厂标准封装
8960
代理CYPRESS全系列芯片,原装现货
CYPRESS
24+
QFP
13500
免费送样原盒原包现货一手渠道联系
Cypress
23+
165-FBGA(15x17)
24840
专业分销产品!原装正品!价格优势!
Cypress(赛普拉斯)
25+
5000
只做原装 假一罚百 可开票 可售样

CY7C144数据表相关新闻