1-Mbit (128K x 8) Static RAM

Functional Description The CY7C109D/CY7C1009D is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1), an active HIGH Chip Enable (CE2), an active LOW Output Enable (OE), and tri-state drivers.The eight inp

1-Mbit (128 K × 8) Static RAM

Features ■ Pin- and function-compatible with CY7C109B/CY7C1009B ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 80 mA at 10 ns ■ Low CMOS standby power ❐ ISB2 = 3 mA ■ 2.0 V Data Retention ■ Automatic power-down when deselected ■ TTL-compatible inputs and outputs ■ Easy memory exp

1-Mbit (128 K 횞 8) Static RAM Low active power

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封装/外壳：32-BSOJ（0.400"，10.16mm 宽） 包装：托盘 描述：IC SRAM 1MBIT PARALLEL 32SOJ 集成电路（IC） 存储器

异步 SRAM

封装/外壳：32-BSOJ（0.400"，10.16mm 宽） 包装：卷带（TR） 描述：IC SRAM 1MBIT PARALLEL 32SOJ 集成电路（IC） 存储器

1-Mbit (128 K × 8) Static RAM

Features ■ Pin- and function-compatible with CY7C109B/CY7C1009B ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 80 mA at 10 ns ■ Low CMOS standby power ❐ ISB2 = 3 mA ■ 2.0 V Data Retention ■ Automatic power-down when deselected ■ TTL-compatible inputs and outputs ■ Easy memory exp

1-Mbit (128 K × 8) Static RAM

Features ■ Pin- and function-compatible with CY7C109B/CY7C1009B ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 80 mA at 10 ns ■ Low CMOS standby power ❐ ISB2 = 3 mA ■ 2.0 V Data Retention ■ Automatic power-down when deselected ■ TTL-compatible inputs and outputs ■ Easy memory exp