1-Mbit (256K x 4) Static RAM

Functional Description [1] The CY7C106D and CY7C1006D are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. These devices have an automatic power-dow

1-Mbit (256K x 4) Static RAM

Functional Description [1] The CY7C106D and CY7C1006D are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. These devices have an automatic power-dow

封装/外壳：28-BSOJ（0.400"，10.16mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC SRAM 1MBIT PARALLEL 28SOJ 集成电路（IC） 存储器

IC SRAM 1M PARALLEL 28SOJ

封装/外壳：28-BSOJ（0.400"，10.16mm 宽） 包装：管件管件 描述：IC SRAM 1MBIT PARALLEL 28SOJ 集成电路（IC） 存储器

256K x 4 Static RAM

Functional Description The CY7C106B and CY7C1006B are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down

256K x 4 Static RAM

Functional Description The CY7C106BN and CY7C1006BN are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-dow

256K x 4 Static RAM

文件：349.62 Kbytes Page：8 Pages

256K x 4 Static RAM

文件：406.46 Kbytes Page：9 Pages