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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CY15V104QI-20LPXI | 4Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Features • 4-Mbit ferroelectric random access memory (EXCELON™ LP F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology | Infineon 英飞凌 |   | |
CY15V104QI-20LPXI | 封装/外壳：8-UQFN 包装：托盘 描述：IC FRAM 4MBIT SPI 20MHZ 8GQFN 集成电路（IC） 存储器 | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | |
CY15V104QI-20LPXI | F-RAM（铁电RAM） | Infineon 英飞凌 | | |
4Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Features • 4-Mbit ferroelectric random access memory (EXCELON™ LP F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology | Infineon 英飞凌 | | ||
F-RAM（铁电RAM） | Infineon 英飞凌 | | ||
4Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Features • 4-Mbit ferroelectric random access memory (EXCELON™ LP F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology | Infineon 英飞凌 | | ||
4Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Features • 4-Mbit ferroelectric random access memory (EXCELON™ LP F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology | Infineon 英飞凌 | | ||
4Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Features • 4-Mbit ferroelectric random access memory (EXCELON™ LP F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology | Infineon 英飞凌 | | ||
4Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Features • 4-Mbit ferroelectric random access memory (EXCELON™ LP F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology | Infineon 英飞凌 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SPANSION(飞索) |
2021+ |
GQFN-8(3.23x3.28) |
499 |
||||
CYPRESS(赛普拉斯) |
24+ |
UQFN8 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
INFINEON/英飞凌 |
23+ |
PG-VQFN-8 |
28611 |
为终端用户提供优质元器件 |
|||
CYPRESSSEMICONDUCTORCORP |
23+ |
8-UQFN |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
24+ |
N/A |
61000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
SPANSION(飞索) |
2447 |
GQFN-8(3.23x3.28) |
315000 |
490个/托盘一级代理专营品牌!原装正品,优势现货,长 |
|||
Cypress |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
Cypress(赛普拉斯) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
Cypress |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
Cypress |
24+ |
N/A |
294 |
原装原装原装 |
CY15V104QI-20LPXI芯片相关品牌
CY15V104QI-20LPXI规格书下载地址
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DdatasheetPDF页码索引
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