位置：首页 > IC中文资料 > CY15B108QI-20LPXC
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CY15B108QI-20LPXC | 8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, inrush current control, industrial Features • 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (see “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced | Infineon 英飞凌 |   | |
CY15B108QI-20LPXC | 封装/外壳：8-UQFN 包装：托盘 描述：IC FRAM 8MBIT SPI 20MHZ 8GQFN 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | |
CY15B108QI-20LPXC | 8Mb 3.3V Commercial 20MHz SPI EXCELON™ F-RAM in 8-pin GQFN with Inrush current control | Infineon 英飞凌 | | |
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, inrush current control, industrial Features • 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (see “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced | Infineon 英飞凌 | | ||
8Mb 3.3V Commercial 20MHz SPI EXCELON™ F-RAM in 8-pin GQFN with Inrush current control | Infineon 英飞凌 | | ||
8-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 20 MHz, automotive grade 3 Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 5-year data retention (see “Data retention and endurance” on page 25) - Infineon instant non-volatile write technology - Advanced high | Infineon 英飞凌 | | ||
8-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 20 MHz, automotive grade 3 Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 5-year data retention (see “Data retention and endurance” on page 25) - Infineon instant non-volatile write technology - Advanced high | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, inrush current control, industrial Features • 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (see “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, inrush current control, industrial Features • 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (see “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced | Infineon 英飞凌 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
25+ |
原封装 |
51220 |
郑重承诺只做原装进口货 |
|||
INFINEON/英飞凌 |
23+ |
PG-VQFN-8 |
28611 |
为终端用户提供优质元器件 |
|||
24+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
Cypress |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
Cypress(赛普拉斯) |
25+ |
5000 |
只做原装 假一罚百 可开票 可售样 |
||||
Cypress Semiconductor Corp |
2025+ |
8-GQFN(3,23x3,28) |
13566 |
||||
Cypress(赛普拉斯) |
24+ |
N/A |
9860 |
原装正品现货支持实单 |
|||
INFINEON |
24+ |
con |
323329 |
优势库存,原装正品 |
|||
Cypress Semiconductor Corp |
/ROHS.original |
8-GQFN(3,23x3,28) |
387 |
﹤原装元器件﹥现货特价/供应元器件代理经销。欢迎咨 |
|||
CYPRESS |
2023+ |
SMD |
3367 |
原装现货热卖,安罗世纪电子只做原装 |
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