BALUN TRANSFORMER

RF TRANSFORMERS Transformers for Wideband RF Applications ● RoHS peak reflow temperature rating: 245°C° ● Miniature surface mount package ● Various impedance ratios available ● Excellent insertion loss ● Ideal for Balanced-to-Unbalanced applications ● Products from 0.05 to 1900 MHz bandwidt

RF TRANSFORMERS Transformers for Wideband RF Applications

RF TRANSFORMERS Transformers for Wideband RF Applications ● RoHS peak reflow temperature rating: 245°C° ● Miniature surface mount package ● Various impedance ratios available ● Excellent insertion loss ● Ideal for Balanced-to-Unbalanced applications ● Products from 0.05 to 1900 MHz bandwidt

封装/外壳：非标准型 SMD 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：BALUN 3MHZ-300MHZ 1:2 SMD RF/IF，射频/中频和 RFID 巴伦转换器 ，平衡-不平衡转换器

XFMR,RF,SGL,RAC,1:2CT,3-30 NPB

XFMR,RF,SGL,RAC,1:2CT,3-30 NPB

封装/外壳：5-SMD 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：BALUN 3MHZ-300MHZ 5SMD RF/IF，射频/中频和 RFID 巴伦转换器 ，平衡-不平衡转换器

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el

UHF power transistor

DESCRIPTION NPN silicon planar UHF power transistor in a 2-lead SOT390A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and ou

SWITCHMODE?? Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • E

SWITCHMODE??Schottky Power Rectifirer

SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use

SCHOTTKY BARRIER RECTIFIERS(20A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara