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型号 功能描述 生产厂家 企业 LOGO 操作

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VHB10-12F is Designed for 12.5 V, Class C Applications up to 175 MHz. FEATURES: • Common Emitter • PG = 10 dB at 10 W/175 MHz • Omnigold™ Metalization System

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VHB10-12S is Designed for 12.5 V, High Band Application. FEATURES: • Common Emitter • PG = 10 dB at 10 W/175 MHz • Omnigold™ Metalization System

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VLB10-12F is Designed for 12.5 V, Large Signal Class C Amplifier Applications up to 50 MHz. FEATURES: • Common Emitter • PG = 16 dB at 10 W/50 MHz • Omnigold™ Metalization System

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VLB10-12S is Designed for 12.5 V, Large Signal Class C Amplifier Applications up to 50 MHz. FEATURES: • Common Emitter • PG = 16 dB at 10 W/50 MHz • Omnigold™ Metalization System

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VMB10-12Sis Designed for 12.5 V, Medium Band Class C Application. FEATURES: • Common Emitter • PG= 13 dB at 10W/88MHz • Omnigold™ Metalization System

ASI

CTL10-12产品属性

  • 类型

    描述

  • 型号

    CTL10-12

  • 制造商

    Thomas & Betts

  • 功能描述

    COMPR TERMINAL

  • 制造商

    Thomas & Betts

  • 功能描述

    Lug Terminal 55.37mm 19.05mm

更新时间:2026-5-18 15:40:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VITEC
23+
SIP
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
26+
N/A
48000
一级代理-主营优势-实惠价格-不悔选择

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