NPN-Silizium-Fototransistor Silicon NPN Phototransistor

Features ● Especially suitable for applications from 450 nm to 1120 nm ● High linearity ● Hermetically sealed metal package (TO-18) with base connection, suitable up to 125 °C1) ● Available in groups Applications ● Photointerrupters ● Industrial electronics ● For control

Broadband Two-Way Power Divider 2 MHz - 2 GHz

Features • 11 Octave Coverage • Low Loss – 1.25 dB Max • High Isolation – 20 dB Min

Broadband Two-Way Power Divider 2 MHz - 2 GHz

Features • 11 Octave Coverage • Low Loss – 1.25 dB Max • High Isolation – 20 dB Min

Broadband Two-Way Power Divider 2 MHz - 2 GHz

Features • 11 Octave Coverage • Low Loss – 1.25 dB Max • High Isolation – 20 dB Min

Broadband Two-Way Power Divider 2 MHz - 2 GHz

Features • 11 Octave Coverage • Low Loss – 1.25 dB Max • High Isolation – 20 dB Min