位置：首页 > IC中文资料 > CSD19505KTT
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CSD19505KTT | iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=200A@TC=25℃ ·DrainSourceVoltage :VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.1mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
CSD19505KTT | CSD19505KTT80VN-ChannelNexFET™PowerMOSFET 1Features 1•Ultra-LowQgandQgd •LowThermalResistance •AvalancheRated •Pb-FreeTerminalPlating •RoHSCompliant •HalogenFree •D2PAKPlasticPackage 2Applications •SecondarySideSynchronousRectifier •MotorControl 3Description This80-V,2.6-mΩ,D2PAK(TO-263)Nex | TI2Texas Instruments 德州仪器美国德州仪器公司 |  | |
CSD19505KTT | 80VN-ChannelNexFETPowerMOSFET 文件：408.23 Kbytes Page：13 Pages | TI1Texas Instruments 德州仪器美国德州仪器公司 |  | |
CSD19505KTT80VN-ChannelNexFET™PowerMOSFET 1Features 1•Ultra-LowQgandQgd •LowThermalResistance •AvalancheRated •Pb-FreeTerminalPlating •RoHSCompliant •HalogenFree •D2PAKPlasticPackage 2Applications •SecondarySideSynchronousRectifier •MotorControl 3Description This80-V,2.6-mΩ,D2PAK(TO-263)Nex | TI2Texas Instruments 德州仪器美国德州仪器公司 | | | |
CSD19505KTT80VN-ChannelNexFET™PowerMOSFET 1Features 1•Ultra-LowQgandQgd •LowThermalResistance •AvalancheRated •Pb-FreeTerminalPlating •RoHSCompliant •HalogenFree •D2PAKPlasticPackage 2Applications •SecondarySideSynchronousRectifier •MotorControl 3Description This80-V,2.6-mΩ,D2PAK(TO-263)Nex | TI2Texas Instruments 德州仪器美国德州仪器公司 | | | |
CSD19505KTT80VN-ChannelNexFET™PowerMOSFET 1Features 1•Ultra-LowQgandQgd •LowThermalResistance •AvalancheRated •Pb-FreeTerminalPlating •RoHSCompliant •HalogenFree •D2PAKPlasticPackage 2Applications •SecondarySideSynchronousRectifier •MotorControl 3Description This80-V,2.6-mΩ,D2PAK(TO-263)Nex | TI2Texas Instruments 德州仪器美国德州仪器公司 | | | |
80VN-ChannelNexFETPowerMOSFET 文件：408.23 Kbytes Page：13 Pages | TI1Texas Instruments 德州仪器美国德州仪器公司 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=150A@TC=25℃ ·DrainSourceVoltage :VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.1mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
CSD19505KCS,80VN-ChannelNexFETPowerMOSFETs 文件：820.68 Kbytes Page：10 Pages | TI1Texas Instruments 德州仪器美国德州仪器公司 | | | |
PortableCordage,3C#14StrBC,PVCIns,PVCJkt,ULTypeSTOW-A ProductDescription PortableCordage,3Conductor14AWG(41x30)BareCopper,PVCInsulation,PVCOuterJacket,ULTypeSTOW-A | BELDENBelden Inc. 百通电缆设计科技有限公司 |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI(德州仪器) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
TI/德州仪器 |
2023+ |
TO-263 |
6895 |
原厂全新正品旗舰店优势现货 |
|||
TI |
24+ |
TO263 |
39500 |
进口原装现货 支持实单价优 |
|||
TI |
22+ |
TO2634 D2Pak (3 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
TI(德州仪器) |
2021+ |
TO-263-3 |
499 |
||||
TI |
25+ |
DDPAK/TO-263 (KTT) |
6000 |
原厂原装,价格优势 |
|||
TI(德州仪器) |
24+ |
TO-263-3 |
8145 |
支持大陆交货,美金交易。原装现货库存。 |
|||
TI |
16+ |
TO-263 |
10000 |
原装正品 |
|||
TI/德州仪器 |
24+ |
TO-263-3 |
9600 |
原装现货,优势供应,支持实单! |
|||
TI |
24+ |
DDPAK/TO-263|3 |
71000 |
免费送样原盒原包现货一手渠道联系 |
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2020-10-1
DdatasheetPDF页码索引
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