Silicon N-Channel Power MOSFET

Features： - Fast Switching - LowON Resistance(Rdson≤0.50Ω) - Low Gate Charge (Typical Data:28nC) - Low Reverse transfer capacitances(Typical:21pF) - 100%Single Pulse avalanche energy Test

Silicon N-Channel Power MOSFET

Features： - Fast Switching - LowON Resistance(Rdson≤0.50Ω) - Low Gate Charge (Typical Data:28nC) - Low Reverse transfer capacitances(Typical:21pF) - 100%Single Pulse avalanche energy Test

Silicon N-Channel Power MOSFET

General Description： CS740F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for syst

MAGNETIC POWDER CORES

文件：35.7387 Mbytes Page：42 Pages

MAGNETIC POWDER CORES

文件：35.7387 Mbytes Page：42 Pages

MAGNETIC POWDER CORES

文件：35.7387 Mbytes Page：42 Pages

MAGNETIC POWDER CORES

文件：35.7387 Mbytes Page：42 Pages

MAGNETIC POWDER CORES

文件：35.7387 Mbytes Page：42 Pages

MOS 场效应晶体管--普通MOSFET

300V-900V NMOS

300V-900V NMOS

Silicon epitaxial planar type

Silicon epitaxial planar type For super high speed switching For small current rectification ■ Features • Two MA3X721 (MA721) is contained in one package (series connection) • Forward current (Average) IF(AV) = 200 mA (per single diode) rectification is possible

Integrated Circuit Audio Power Amp, 2W

Description: TheNTE740A is an Audio Power Amplifier in a 14–Lead DIP type package designed for minimal external component requirements. Features: ● Low Distortion ● Low Quiescent Current ● 34dB Internally Fixed Gain ● High Input Impedance ● Thermal Overload Protection ● Output Short Circui

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Schottky rectifier diodes in a surface mounting plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal c

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Schottky rectifier diodes in a surface mounting plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal c

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. FEATURES • Low forward volt drop • Fast switching • Reverse surge capabil