Load Switch Applications

Features • Adoption of MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High speed switching. • Ultrasmall-sized package permitting applied sets to be made small and slim (0.9mm). • High allowable power dissipation. • IECO is guaranteed for preventi

Bipolar Transistor

Bipolar Transistor –20V, –3A, Low VCE(sat), PNP Single CPH6 Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High speed switching • Ultrasmall-sized package permitting applied sets to be made small and slim (0.9mm) • High allowabl

Bipolar Transistor, -20V, -3A, Low VCE(sat), PNP Single CPH6

Bipolar Transistor

Bipolar Transistor –20V, –3A, Low VCE(sat), PNP Single CPH6 Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High speed switching • Ultrasmall-sized package permitting applied sets to be made small and slim (0.9mm) • High allowabl

封装/外壳：SOT-23-6 细型，TSOT-23-6 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 20V 3A 6CPH 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：SOT-23-6 细型，TSOT-23-6 包装：散装 描述：TRANS PNP 20V 3A 6CPH 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

T- Subminiature Lamps

2.4 GHz Wireless LAN Power Amplifier Module

PRODUCT DESCRIPTION The ANADIGICS AWL6153 WLAN Power Amplifier is an easy to use module that delivers high levels of linearity and efficiency for high data rate applications. Designed for the 2.4 GHz WLAN standards, it supports the 54 Mbps data rates specified in IEEE 802.11g. Requiring a si

S-11 Double Contact Bayonet Base

S-11 Double Contact Bayonet Base T-3/4 Wire Terminal T-3/4 Micro-Midget Flange Base

Position Sensor

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RF AMPLIFIER MODEL

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