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CPC5603C价格
参考价格：￥2.0083
型号：CPC5603C 品牌：Clare 备注：这里有CPC5603C多少钱，2026年最近7天走势，今日出价，今日竞价，CPC5603C批发/采购报价，CPC5603C行情走势销售排行榜，CPC5603C报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CPC5603C | N Channel Depletion Mode FET Description The CPC5603C is an “N” channel depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertica | Clare Clare, Inc. |   | |
CPC5603C | N Channel Depletion Mode FET Description The CPC5603 is an N-channel, depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical | Clare Clare, Inc. | | |
CPC5603C | N-Channel Depletion Mode FET 文件：112.58 Kbytes Page：5 Pages | IXYS 艾赛斯 | | |
CPC5603C | N-Channel Depletion Mode FET 文件：111.86 Kbytes Page：5 Pages | Clare Clare, Inc. | | |
N Channel Depletion Mode FET Description The CPC5603 is an N-channel, depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical | Clare Clare, Inc. | | ||
N Channel Depletion Mode FET Description The CPC5603C is an “N” channel depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertica | Clare Clare, Inc. | | ||
N Channel Depletion Mode FET Description The CPC5603 is an N-channel, depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical | Clare Clare, Inc. | | ||
N-Channel Depletion Mode FET 文件：111.86 Kbytes Page：5 Pages | Clare Clare, Inc. | | ||
N-Channel Depletion Mode FET 文件：112.58 Kbytes Page：5 Pages | IXYS 艾赛斯 | | ||
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CPC5603C产品属性
- 类型
描述
- 型号
CPC5603C
- 功能描述
MOSFET N Channel Depletion Mode FET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CLARE |
24+ |
SOT223 |
990000 |
明嘉莱只做原装正品现货 |
|||
CLARE |
24+ |
SOT-223 |
17 |
||||
CLARE |
24+ |
SOT-223 |
22055 |
郑重承诺只做原装进口现货 |
|||
CLARE |
17+ |
SOT-223 |
6200 |
||||
CLARE |
2447 |
SOP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
CLARE |
20+ |
SOT-223 |
32500 |
现货很近!原厂很远!只做原装 |
|||
IXYS(艾赛斯) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
IXYS |
24+ |
SMD |
5500 |
长期供应原装现货实单可谈 |
|||
CLARE |
21+ |
SOT223 |
1638 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
IXYS |
14+ |
SOT-223 |
2000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
CPC5603C规格书下载地址
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