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CPC5603C价格
参考价格：￥2.0083
型号：CPC5603C 品牌：Clare 备注：这里有CPC5603C多少钱，2025年最近7天走势，今日出价，今日竞价，CPC5603C批发/采购报价，CPC5603C行情走势销售排行榜，CPC5603C报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CPC5603C | N Channel Depletion Mode FET Description The CPC5603C is an “N” channel depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertica | Clare Clare, Inc. |   | |
CPC5603C | N Channel Depletion Mode FET Description The CPC5603 is an N-channel, depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical | Clare Clare, Inc. | | |
CPC5603C | N-Channel Depletion Mode FET 文件：112.58 Kbytes Page：5 Pages | IXYS 艾赛斯 | | |
CPC5603C | N-Channel Depletion Mode FET 文件：111.86 Kbytes Page：5 Pages | Clare Clare, Inc. | | |
N Channel Depletion Mode FET Description The CPC5603 is an N-channel, depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical | Clare Clare, Inc. | | ||
N Channel Depletion Mode FET Description The CPC5603C is an “N” channel depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertica | Clare Clare, Inc. | | ||
N Channel Depletion Mode FET Description The CPC5603 is an N-channel, depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical | Clare Clare, Inc. | | ||
N-Channel Depletion Mode FET 文件：111.86 Kbytes Page：5 Pages | Clare Clare, Inc. | | ||
N-Channel Depletion Mode FET 文件：112.58 Kbytes Page：5 Pages | IXYS 艾赛斯 | | ||
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CPC5603C产品属性
- 类型
描述
- 型号
CPC5603C
- 功能描述
MOSFET N Channel Depletion Mode FET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CLARE |
24+ |
SOT223 |
37935 |
郑重承诺只做原装进口现货 |
|||
CLARE |
24+ |
SOT223 |
990000 |
明嘉莱只做原装正品现货 |
|||
CLARE |
24+ |
SOT-223 |
22055 |
郑重承诺只做原装进口现货 |
|||
CLARE |
17+ |
SOT-223 |
6200 |
||||
CENTRAL |
23+ |
SOT-223 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
CLARE |
22+ |
SOT-223 |
100000 |
代理渠道/只做原装/可含税 |
|||
CAVIUM |
24+ |
BGA |
6618 |
公司现货库存,支持实单 |
|||
IXYS/艾赛斯 |
24+ |
NA/ |
1000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
CLARE |
25+ |
SOT223 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
IXYS |
14+ |
SOT-223 |
2000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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CPC5603C规格书下载地址
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2020-10-28
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