Solid State Relays (MOSFET-type)

· Low drive current\n· High reliability\n· Optically Isolated Input and Output\n· No EMI/RFI generation\n· Arc-free with no snubbing circuits\n· Machine insertable, wave solderable\n· AC/DC switching\n· Current Limiting (Parts with \"L\" Suffix)\n· FCC compatible;

封装/外壳：4-SOP（0.150"，3.81mm） 包装：管件 描述：SSR RELAY SPST-NC 120MA 0-350V 继电器 固态继电器

封装/外壳：4-SOP（0.150"，3.81mm） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SSR RELAY SPST-NC 120MA 0-350V 继电器 固态继电器

4-Pin SOP OptoMOS Relays

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350V Normally-Closed Single-Pole 4-Pin SOP OptoMOS Relay

文件：171.11 Kbytes Page：6 Pages

350V Normally-Closed Single-Pole 4-Pin SOP OptoMOS Relay

文件：171.11 Kbytes Page：6 Pages

4-Pin SOP OptoMOS Relays

文件：421.78 Kbytes Page：5 Pages

AM Tuner System for Car Radios and Home Stereos

Overview The LA1135 is a high-performance AM electronic tuner IC that is greatly improved in cross modulation characteristics. It is especially suited for use in car radio and home stereo (antenna: loop) applications. Features • Excellent cross modulation characteristics: Meets the requirements

AM Tuner System for Car Radios and Home Stereos

Overview The LA1135 is a high-performance AM electronic tuner IC that is greatly improved in cross modulation characteristics. It is especially suited for use in car radio and home stereo (antenna: loop) applications. Features • Excellent cross modulation characteristics: Meets the requirements

Integrated Circuit High Gain Audio Preamp

Features: • Power Supply with Wide Working Voltage Range • High Open–Loop Gain • Extremely Low Distortion • Low Noise • High Input Impedance and Low Output Impedance • Low Current Dissipation Applications: • Car Stereos • Tape Recorders

RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

DESCRIPTION The SD1135 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. ■ 470 MHz ■ 12.5 VOLTS ■ EFFICIENCY 60 ■ COMMON EMITTER ■ POUT = 5

18-27.5 GHz 1W Power Amplifier

Key Features • 0.25 um pHEMT Technology • 14 dB Nominal Gain at 23GHz • 30 dBm Nominal P1dB • 38dBm OTOI typical • Typical 15dB Input/Output RL • Bias 6 - 7V @ 540 mA • On-chip power detector diode Primary Applications • Point-to-Point Radio • Point-to-Multipoint Communications • Ka Ban