Small Signal Transistor PNP - High Voltage Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 4.7 x 4.7 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

Small Signal Transistors PNP - High Voltage Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19.7 x 19.7 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 4.7 x 4.7 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

P-Channel JFET Die

文件：465.81 Kbytes Page：9 Pages

PNP - High Voltage Transistor Die

文件：530.8 Kbytes Page：9 Pages

Chip Form: High Voltage Transistor

P-Channel JFET Die

文件：465.81 Kbytes Page：9 Pages

PNP - High Voltage Transistor Die

文件：530.8 Kbytes Page：9 Pages

P-Channel JFET Die

文件：465.81 Kbytes Page：9 Pages

PNP - High Voltage Transistor Die

文件：530.8 Kbytes Page：9 Pages

Small Signal Transistors PNP - High Voltage Transistor Chip

Small Signal Transistors PNP - High Voltage Transistor Chip

文件：401.83 Kbytes Page：2 Pages

Chip Form: High Voltage Transistor

P-Channel JFET Die

文件：465.81 Kbytes Page：9 Pages

PNP - High Voltage Transistor Die

文件：530.8 Kbytes Page：9 Pages

P-Channel JFET Die

文件：465.81 Kbytes Page：9 Pages

PNP - High Voltage Transistor Die

文件：530.8 Kbytes Page：9 Pages

P-Channel JFET Die

文件：465.81 Kbytes Page：9 Pages

PNP - High Voltage Transistor Die

文件：530.8 Kbytes Page：9 Pages

PNP - High Voltage Transistor Die

文件：530.8 Kbytes Page：9 Pages

P-Channel JFET Die

文件：465.81 Kbytes Page：9 Pages

P-Channel JFET Die

文件：465.81 Kbytes Page：9 Pages

PNP - High Voltage Transistor Die

文件：530.8 Kbytes Page：9 Pages

P-Channel JFET Die

文件：465.81 Kbytes Page：9 Pages

PNP - High Voltage Transistor Die

文件：530.8 Kbytes Page：9 Pages

Very fast high-voltage soft-recovery rectifiers

DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. FEATU

3648 X 3pixel CCD Linear Sensor (Color)

Description The ILX716K is a reduction type CCD linear sensor developed for color image scanner, and has shutter function per each color. This sensor reads A4-size documents at a density of 400 DPI. Features • Number of effective pixels: 10944 pixels (3648 pixels × 3) • Pixel size: 8µm × 8µm (

High Sensitivity, High Output Type Photocoupler

■ Features 1. High current transfer ratio ( CTR : MIN. 1 000 at I F = 1mA, V CE = 2V ) 2. High collector power dissipation ( Pc : 300mW ) 3. High isolation voltage between input and output ( Viso : 5 000V rms ) 4. Recognized by UL, file No. E64380 ■ Applications 1. DC-DC SSRs 2. Power monit

LOW DROPOUT VOLTAGE REGULATOR

DESCRIPTION The TK716xx is a low dropout linear regulator housed in a small SOT23-5 package, rated at 500 mW. The phase compensation in the IC has been optimized to allow the use of ceramic or tantalum output capacitors. The device is in the “on” state when the control pin is pulled to a logic hi

16-Bit DIGITAL-TO-ANALOG CONVERTER with Serial Data Interface

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