Small Signal Transistors NPN - Amp Switch Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 22 x 22 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.7 X 3.7 MILS Emitter Bonding Pad Area 4.2 X 4.2 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

Small Signal Transistors PNP - High Current Transistor Chip

PELTIER MODULE

DESCRIPTION: PELTIER MODULE FEATURES • arcTEC™ structure on select models • solid state device • precise temperature control • quiet operation

Small Signal Transistors PNP - High Voltage Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 22 x 22 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.7 x 3.7 MILS Emitter Bonding Pad Area 4.2 x 4.2 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

Small Signal Transistors PNP - High Current Transistor Chip

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包装：散装 描述：HEATSHRINK END CAP BLACK 电缆，电线 - 管理 热缩套，帽盖

包装：盒 描述：PELTIER, 40 X 40 X 3.8 MM, 7 A, 风扇，热管理 热 - 热电、Peltier 模块

PELTIER MODULE

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Chip Form: High Current Transistor Central Semiconductor

PNP - High Current Transistor Die 0.5 Amp, 80 Volt

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PNP - High Current Transistor Die 0.5 Amp, 80 Volt

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Chip Form: High Current Transistor Central Semiconductor

PNP - High Current Transistor Die 0.5 Amp, 60 Volt

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CATV amplifier module

DESCRIPTION Hybrid amplifier module operating at a voltage supply of 24 V (DC) encapsulated in a SOT115J package. FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability. APPLICATIONS • CAT

Silicon epitaxial planar type

Silicon epitaxial planar type For switching For wave detection ■ Features • Three isolated elements are contained in one package, allowing high-density mounting • Two MA3X704A (MA704A) is contained in one package (of a type in the same direction) • Low forward voltage VF , optimum for low vo

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

Silicon MOS IC

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