Power Transistors PNP - Amp/Switch Transistor Chip

PROCESS DETAILS PROCESS EPITAXIAL BASE DIE SIZE 80 x 80 MILS DIE THICKNESS 12 MILS BASE BONDING PAD AREA 12 x 18 MILS EMITTER BONDING PAD AREA 13 x 28 MILS TOP SIDE METALIZATION Al - 30,000Å BACK SIDE METALIZATION Cr/Ni/Ag - Ni-6,000Å; Ag-10,000Å

Power Transistors PNP - Amp/Switch Transistor Chip

Two-Terminal IC 1.2 V Reference

PRODUCT DESCRIPTION The AD589 is a 2-terminal, low cost, temperature compensated band gap voltage reference that provides a fixed 1.23 V output voltage for input currents between 50 uA and 5.0 mA. The high stability of the AD589 is primarily dependent upon the matching and thermal tracking of th

PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR

SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR PARTMARKING DETAIL – P89

PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR

FEATURES * Low equivalent on-resistance; RCE(sat) 250mΩ at 1A PARTMARKING DETAILS - 589 COMPLEMENTARY TYPE - FMMT489

Silicon Rectifier General Purpose, Fast Recovery

Features: ● High Surge Current Capability ● High Current Operation ● Fast Switching for High Efficiency

LD/DTMF SWITCHABLE DIALLERS WITH DEDICATED KEYS FOR 20 MEMORIES

DESCRIPTION The SA589 family are keypad switchable LD/DTMF dialler devices with a last number redial facility and twenty 24-digit memories each with its own dedicated dialling key. FEATURES ■ Selectable Loop-Disconnect or DTMF Modes ■ Keypad Switchable LD to DTMF ■ 20 x 24-Digit Memories, (ea