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CP188

Small Signal Transistor NPN - Low Noise Amplifier Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.6 x 14.6 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.9 x 3.9 MILS Emitter Bonding Pad Area 5.5 x 5.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 18,000Å

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CP188

Small Signal Transistor NPN - Low Noise Amplifier Transistor Chip

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PELTIER MODULE

FEATURES • micro size (less than 10 x 10 mm) • wide ΔT max • Qmax of 4.2 W • Au plating available, suitable for soldering • precise temperature control • solid state construction

SAMESKY

PELTIER MODULE

FEATURES • micro size (less than 10 x 10 mm) • wide ΔT max • Qmax of 4.2 W • Au plating available, suitable for soldering • precise temperature control • solid state construction

SAMESKY

NPN - Low Noise Amplifier Transistor Chip

Small Signal Transistor NPN - Low Noise Amplifier Transistor Chip

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Small Signal Transistor NPN - Low Noise Amplifier Transistor Chip

文件:399.18 Kbytes Page:2 Pages

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PELTIER MODULE

文件:787.02 Kbytes Page:5 Pages

CUI

包装:盒 描述:PELTIER, 8.1 X 8.1 X 2.54 MM, 1. 风扇,热管理 热 - 热电、Peltier 模块

CUID

PELTIER MODULE

文件:787.02 Kbytes Page:5 Pages

CUI

60V,500mA,500mW Bare die,14.568 X 14.568 mils,Transistor-Small Signal (<=1A)

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Chip Form: Low Noise Amplifier Transistor

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P-Channel JFET Die

文件:465.81 Kbytes Page:9 Pages

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PNP - High Voltage Transistor Die

文件:530.8 Kbytes Page:9 Pages

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P-Channel JFET Die

文件:465.81 Kbytes Page:9 Pages

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PNP - High Voltage Transistor Die

文件:530.8 Kbytes Page:9 Pages

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NPN - Low Noise Transistor Die

文件:496.25 Kbytes Page:5 Pages

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NPN - Low Noise Transistor Die

文件:496.25 Kbytes Page:5 Pages

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封装/外壳:模具 包装:带盒(TB) 描述:TRANS NPN 60V 0.03A DIE 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

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P-Channel JFET Die

文件:465.81 Kbytes Page:9 Pages

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PNP - High Voltage Transistor Die

文件:530.8 Kbytes Page:9 Pages

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NPN - Low Noise Transistor Die

文件:496.25 Kbytes Page:5 Pages

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P-Channel JFET Die

文件:465.81 Kbytes Page:9 Pages

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PNP - High Voltage Transistor Die

文件:530.8 Kbytes Page:9 Pages

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NPN - Low Noise Transistor Die

文件:496.25 Kbytes Page:5 Pages

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NPN - Low Noise Transistor Die

文件:496.25 Kbytes Page:5 Pages

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P-Channel JFET Die

文件:465.81 Kbytes Page:9 Pages

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PNP - High Voltage Transistor Die

文件:530.8 Kbytes Page:9 Pages

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PNP - Power Transistor Die 8.0 Amp, 150 Volt

文件:475.54 Kbytes Page:4 Pages

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NPN - High Voltage Transistor Die

文件:519.82 Kbytes Page:5 Pages

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NPN - High Current Transistor Die 15 Amp, 60 Volt

文件:809.67 Kbytes Page:5 Pages

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NPN - High Current Transistor Die 10 Amp, 60 Volt

文件:805.74 Kbytes Page:5 Pages

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PNP - High Current Transistor Die 4.0 Amp, 80 Volt

文件:602.69 Kbytes Page:5 Pages

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PNP - High Current Transistor Die 4.0 Amp, 100 Volt

文件:602.77 Kbytes Page:5 Pages

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PNP - High Current Transistor Die 3.0 Amp, 100 Volt

文件:602.85 Kbytes Page:5 Pages

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NPN - Low Noise Transistor Die

文件:496.25 Kbytes Page:5 Pages

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NPN - Low Noise Transistor Die

文件:496.25 Kbytes Page:5 Pages

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P-Channel JFET Die

文件:465.81 Kbytes Page:9 Pages

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PNP - High Voltage Transistor Die

文件:530.8 Kbytes Page:9 Pages

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PNP - High Voltage Transistor Die

文件:530.8 Kbytes Page:9 Pages

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P-Channel JFET Die

文件:465.81 Kbytes Page:9 Pages

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P-Channel JFET Die

文件:465.81 Kbytes Page:9 Pages

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PNP - High Voltage Transistor Die

文件:530.8 Kbytes Page:9 Pages

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P-Channel JFET Die

文件:465.81 Kbytes Page:9 Pages

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PNP - High Voltage Transistor Die

文件:530.8 Kbytes Page:9 Pages

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P-Channel JFET Die

文件:465.81 Kbytes Page:9 Pages

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PNP - High Voltage Transistor Die

文件:530.8 Kbytes Page:9 Pages

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Silicon epitaxial planar type

Silicon epitaxial planar type For high speed and high voltage switching, small-power rectification ■ Features • Allowing to insert into a 5 mm pitch hole • High voltage (VR: 200 V) rectification is possible

PANASONIC

松下

Silicon Complementary Transistors High Voltage Amplifier & Driver

Description: The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type package designed for general purpose, high voltage amplifier and driver applications. Features: • High Collector–Emitter Breakdown Voltage: V(BR)CEO = 80V @ IC = 1mA • High Power Dis

NTE

TRANSILTM

DESCRIPTION The SMAJ series are TRANSILTM diodes designed specifically for protecting sensitive equipment against transient overvoltages. The SMA package allows save spacing on high density printed circuit boards. FEATURES ■ PEAK PULSE POWER : 400 W (10/1000µs) ■ STAND OFF VOLTAGE RANGE : From

STMICROELECTRONICS

意法半导体

TRANSILTM

DESCRIPTION The SMAJ series are TRANSILTM diodes designed specifically for protecting sensitive equipment against transient overvoltages. The SMA package allows save spacing on high density printed circuit boards. FEATURES ■ PEAK PULSE POWER : 400 W (10/1000µs) ■ STAND OFF VOLTAGE RANGE : From

STMICROELECTRONICS

意法半导体

TRANSILTM

DESCRIPTION The SMBJ series are TRANSILTM diodes designed specifically for protecting sensitive equipment against transient overvoltages. Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited t

STMICROELECTRONICS

意法半导体

CP188产品属性

  • 类型

    描述

  • Imax (A):

    1.8

  • Vmax (V):

    3.8

  • Qmax (Th=27°C) (W):

    3.8

  • Qmax (Th=50°C) (W):

    4.2

  • ΔTmax (Th=27°C):

    70

  • ΔTmax (Th=50°C):

    77

  • Dimensions LxWxH (mm):

    8.1 x 8.1 x 2.54

  • Series:

    CP18-M

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