Forward Reference Diodes

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封装/外壳：DO-204AH，DO-35，轴向 包装：卷带（TR） 描述：MOSFET 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-204AH，DO-35，轴向 包装：卷带（TR） 描述：MOSFET 分立半导体产品 二极管 - 整流器 - 单

POWER TRANSISTORS(0.5A,350V,30W)

NPN SILICON HIGH-VOLTAGE TRANSISTORS . . . useful for general–purpose, high voltage applications requiring high fT. FEATURES: • Collector–Emitter Sustaining Voltage — VCEO(sus) = 350 V (Min) @ IC = 2.5 mA • DC Current Gain — hFE = 40 (Min) @ IC = 100 mA — MJE2361T • Current–Gain–Bandwidth P

0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS

NPN Silicon High-Voltage Transistor . . . useful for general–purpose, high voltage applications requiring high fT. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 350 Vdc (Min) @ IC = 2.5 mAdc • DC Current Gain — hFE = 40 (Min) @ IC = 100 mAdc — MJE2361T • Current–Gain–Bandwidth Product —

Silicon Complementary Transistors High Speed Switch

High Speed Switch Description: The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for general–purpose amplifier and high speed switching applications. The high gain of these devices makes it possible for them to be driven directly from integrated circuits.

HIGH-PERFORMANCE LOW-VOLTAGE OPERATIONAL AMPLIFIERS

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HIGH-PERFORMANCE LOW-VOLTAGE OPERATIONAL AMPLIFIERS

文件：274.77 Kbytes Page：17 Pages