NPN SILICON RF TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT918 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high frequency (VHF/UHF) amplifier and oscillator applications. MARKING CODE: C3B

NPN - RF Transistor Chip

Small Signal Transistor NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 2.4 x 2.2 MILS Emitter Bondin

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 15V 600MHZ SOT23 分立半导体产品 晶体管 - 双极（BJT）- 射频

SURFACE MOUNT NPN SILICON RF TRANSISTOR

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SURFACE MOUNT NPN SILICON RF TRANSISTOR

文件：329.2 Kbytes Page：2 Pages

丝印代码：3B；NPN SILICON PLANAR VHF/UHF TRANSISTOR

NPN SILICON PLANAR VHF/UHF TRANSISTOR

Amplifier Transistors

Amplifier Transistors NPN Silicon

Integrated Circuit High Speed Operational Amplifier

Description: The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external

Integrated Circuit High Speed Operational Amplifier

Description: The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external

Integrated Circuit High Speed Operational Amplifier

Description: The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external