位置:首页 > IC中文资料 > CMPT5551

CMPT5551晶体管资料

  • CMPT5551别名:CMPT5551三极管、CMPT5551晶体管、CMPT5551晶体三极管

  • CMPT5551生产厂家:美国中央固体工业公司

  • CMPT5551制作材料:Si-PNP

  • CMPT5551性质:低频或音频放大 (LF)

  • CMPT5551封装形式:贴片封装

  • CMPT5551极限工作电压:160V

  • CMPT5551最大电流允许值

  • CMPT5551最大工作频率:<1MHZ或未知

  • CMPT5551引脚数:3

  • CMPT5551最大耗散功率:0.35W

  • CMPT5551放大倍数

  • CMPT5551图片代号:H-15

  • CMPT5551vtest:160

  • CMPT5551htest:999900

  • CMPT5551atest:0

  • CMPT5551wtest:0.35

  • CMPT5551代换 CMPT5551用什么型号代替

型号 功能描述 生产厂家 企业 LOGO 操作
CMPT5551

NPN SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. MARKING CODE: 1FF

CENTRAL

CMPT5551

Surface mount Transistor-Small Signal (<=1A) NPN High Voltage

CENTRAL

ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5551E is an NPN Silicon Transistor, packaged in an SOT-23 case, designed for general purpose amplifier applications requiring high breakdown voltage and small space saving packaging. MARKING CODE: C555 FEATURES: • High Collector Breakdown Voltage 250V

CENTRAL

SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5551HC type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING CODE: 1FHC

CENTRAL

SURFACE MOUNT NPN SILICON TRANSISTOR

文件:328.79 Kbytes Page:2 Pages

CENTRAL

SURFACE MOUNT NPN SILICON TRANSISTOR

文件:328.79 Kbytes Page:2 Pages

CENTRAL

Surface mount Transistor-Small Signal (<=1A) NPN High Voltage

CENTRAL

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:散装 描述:TRANS NPN 220V 0.6A SOT23 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

CENTRAL

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:散装 描述:TRANS NPN 220V 0.6A SOT23 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

CENTRAL

SURFACE MOUNT NPN SILICON TRANSISTOR

文件:335.49 Kbytes Page:2 Pages

CENTRAL

Surface mount Transistor-Small Signal (<=1A) NPN High Voltage

CENTRAL

SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR

文件:327.57 Kbytes Page:2 Pages

CENTRAL

SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR

文件:327.57 Kbytes Page:2 Pages

CENTRAL

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs PIN PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE

DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm. FEATURES • Small dark current ID = 5 nA • Small terminal capaci

NEC

瑞萨

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

CMPT5551产品属性

  • 类型

    描述

  • Case:

    SOT-23(TO-236AB)

  • Configuration/ Description:

    NPN High Voltage

  • Polarity:

    NPN

  • IC MAX:

    600mA

  • PD MAX:

    350mW

  • VCEO MAX:

    160V

  • hFE MIN:

    80

  • hFE MAX:

    250

  • @VCE:

    5V

  • @IC:

    10mA

  • VCE(SAT) MAX:

    150mV

  • @IB:

    1mA

  • Cob MAX:

    6pF

  • fT MIN:

    100MHz

  • NF MAX:

    8dB

更新时间:2026-8-3 12:24:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Central
23+
N/A
8560
受权代理!全新原装现货特价热卖!
CENTRAL
2450+
SOT23
9850
只做原厂原装正品现货或订货假一赔十!
SOT-23
25+
NA
15659
振宏微专业只做正品,假一罚百!
CENTRAL
25+
SOT-23
30000
代理全新原装现货,价格优势
CENTRAL
23+
SOT-23
16238
原厂授权一级代理,专业海外优势订货,价格优势、品种
CENTRAL
16+
SOT-23
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
26+
N/A
82000
一级代理-主营优势-实惠价格-不悔选择
原装CENTRAL
23+
SOT-23
5000
专注配单,只做原装进口现货
CENTRALSEMICONDUCTOR
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
CENTRAL
23+
SOT-23
50000
全新原装正品现货,支持订货

CMPT5551数据表相关新闻

  • CMS04(TE12L,Q)原装现货价低

    CMS04(TE12L,Q)原装现货价低

    2024-5-30
  • CMS-151103-088SP

    CMS-151103-088SP

    2024-3-13
  • CMS69F116C

    CMS69F116C,全新.当天发货或门市自取,如需了解更多产品信息联系我们.零七五五.八二七三二二九一/零七五五,八五二七四六六二 ,企鹅:一一七四零五二三五三/一八五二三 四六九零六.V:八七六八零五五八.

    2021-6-9
  • CMPA601C025F

    射频放大器 GaN MMIC Power Amp 6.0-12.0GHz, 25 Watt

    2019-12-9
  • CMPA601C025F

    射频放大器 GaN MMIC Power Amp 6.0-12.0GHz, 25 Watt

    2019-12-7
  • CMPA801B025F

    射频放大器 GaN MMIC Power Amp 8.0-11.0GHz, 25 Watt

    2019-12-7