CMPT5551晶体管资料
CMPT5551别名：CMPT5551三极管、CMPT5551晶体管、CMPT5551晶体三极管
CMPT5551生产厂家：美国中央固体工业公司
CMPT5551制作材料：Si-PNP
CMPT5551性质：低频或音频放大 （LF）
CMPT5551封装形式：贴片封装
CMPT5551极限工作电压：160V
CMPT5551最大电流允许值：
CMPT5551最大工作频率：<1MHZ或未知
CMPT5551引脚数：3
CMPT5551最大耗散功率：0.35W
CMPT5551放大倍数：
CMPT5551图片代号：H-15
CMPT5551vtest：160
CMPT5551htest：999900
- CMPT5551atest：0
CMPT5551wtest：0.35
CMPT5551代换 CMPT5551用什么型号代替：
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CMPT5551 | NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. MARKING CODE: 1FF | CENTRAL |   | |
CMPT5551 | Surface mount Transistor-Small Signal (<=1A) NPN High Voltage | CENTRAL | | |
ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5551E is an NPN Silicon Transistor, packaged in an SOT-23 case, designed for general purpose amplifier applications requiring high breakdown voltage and small space saving packaging. MARKING CODE: C555 FEATURES: • High Collector Breakdown Voltage 250V | CENTRAL | | ||
SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5551HC type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING CODE: 1FHC | CENTRAL | | ||
SURFACE MOUNT NPN SILICON TRANSISTOR 文件：328.79 Kbytes Page：2 Pages | CENTRAL | | ||
SURFACE MOUNT NPN SILICON TRANSISTOR 文件：328.79 Kbytes Page：2 Pages | CENTRAL | | ||
Surface mount Transistor-Small Signal (<=1A) NPN High Voltage | CENTRAL | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS NPN 220V 0.6A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | CENTRAL | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS NPN 220V 0.6A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | CENTRAL | | ||
SURFACE MOUNT NPN SILICON TRANSISTOR 文件：335.49 Kbytes Page：2 Pages | CENTRAL | | ||
Surface mount Transistor-Small Signal (<=1A) NPN High Voltage | CENTRAL | | ||
SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR 文件：327.57 Kbytes Page：2 Pages | CENTRAL | | ||
SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR 文件：327.57 Kbytes Page：2 Pages | CENTRAL | | ||
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs PIN PHOTO DIODE MODULE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm. FEATURES • Small dark current ID = 5 nA • Small terminal capaci | NEC 瑞萨 | | ||
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | |
CMPT5551产品属性
- 类型
描述
- Case：
SOT-23(TO-236AB)
- Configuration/ Description：
NPN High Voltage
- Polarity：
NPN
- IC MAX：
600mA
- PD MAX：
350mW
- VCEO MAX：
160V
- hFE MIN：
80
- hFE MAX：
250
- @VCE：
5V
- @IC：
10mA
- VCE(SAT) MAX：
150mV
- @IB：
1mA
- Cob MAX：
6pF
- fT MIN：
100MHz
- NF MAX：
8dB
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CENTRAL |
25+ |
SOT23 |
4500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
26+ |
N/A |
82000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
CENTRAL |
2025+ |
SOT23 |
4365 |
全新原厂原装产品、公司现货销售 |
|||
CENTRAL |
25+ |
SOT-23 |
90000 |
全新原装现货 |
|||
13+ |
35058 |
原装分销 |
|||||
Central Semiconductor |
21+ |
- |
277 |
全新原装鄙视假货 |
|||
Central Semiconductor |
1232 |
6000 |
优势货源原装正品 |
||||
CENTRAL |
22+ |
SOT-23 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
CENTRALSEMICONDUCTOR |
24+ |
NA |
12000 |
原装现货,专业配单专家 |
|||
CENTRALSEMICONDUCTOR |
21+ |
NA |
6000 |
只做原装,一定有货,不止网上数量,量多可订货! |
CMPT5551芯片相关品牌
CMPT5551规格书下载地址
CMPT5551参数引脚图相关
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