SURFACE MOUNT LOW LEAKAGE SILICON DIODE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHD457A, CMHD459A types are silicon planar diodes, epoxy molded in a SOD-123 surface mount package, designed for low leakage applications. MARKING CODES: CMHD457A: C7A CMHD459A: C9A

SURFACE MOUNT LOW LEAKAGE SILICON DIODE

文件：371.27 Kbytes Page：2 Pages

SURFACE MOUNT LOW LEAKAGE SILICON DIODE

文件：371.27 Kbytes Page：2 Pages

Surface mount Diode-Low Leakage Single

封装/外壳：SOD-123 包装：散装 描述：TRANSISTOR 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：SOD-123 包装：散装 描述：TRANSISTOR 分立半导体产品 二极管 - 整流器 - 单

NPN high-voltage transistors

DESCRIPTION NPN transistors in a TO-126; SOT32 plastic package. FEATURES • Low current (max. 100 mA) • High voltage (max. 300 V). APPLICATIONS • Intended for video output stages in black-and-white and in colour television receivers.

HIGH VOLTAGE VIDEO AMPLIFIERS

丝印代码：459；450V SILICON NPN HIGH VOLTAGE SWITCHING TRANSISTOR

Summary V(BR)CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use in hi

450V SILICON NPN HIGH VOLTAGE SWITCHING TRANSISTOR

Summary V(BR)CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use in hi

N-Channel Silicon JFET Transistor AF Amplifier/Chopper/Switch

N–Channel Silicon JFET Transistor AF Amplifier/Chopper/Switch