T-3 1/4 Miniature Bayonet Base

T-3 1/4 Miniature Bayonet Base T-3 1/4 Miniature Screw Base

Bayonet Base, Screw Base

T-3 1/4 Miniature Bayonet Base T-3 1/4 Miniature Screw Base

Single Phase Bridge Rectifiers

Features: • Metal case for maximum heat dissipation • Surge overload ratings to 400 amperes

Single Phase Bridge Rectifiers

Features: • Metal case for maximum heat dissipation • Surge overload ratings to 400 amperes

Single Phase Bridge Rectifiers

Features: • Metal case for maximum heat dissipation • Surge overload ratings to 400 amperes

Single Phase Bridge Rectifiers

Features: • Metal case for maximum heat dissipation • Surge overload ratings to 400 amperes

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE • IC ...................................................................400A • VCES ............................................................600V • Insulated Type • 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

Trench Gate Design Dual IGBTMOD??400 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE ● IC...................................................................400A ● VCES ..........................................................600V ● Insulated Type ● 2-elements in a pack ● UL Recognized Yellow Card No. E80276

Dual IGBTMOD 400 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated fro

IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE ● IC...................................................................400A ● VCES ..........................................................600V ● Insulated Type ● 2-elements in a pack ● UL Recognized Yellow Card No. E80276

IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE ● IC...................................................................400A ● VCES ..........................................................600V ● Insulated Type ● 2-elements in a pack ● UL Recognized Yellow Card No. E80276

High Frequency Dual IGBTMOD??400 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and inter connects are isolated

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE IC ...................................................................400A VCES ............................................................600V Insulated Type 2-elements in a pack APPLICATION High frequency switching use (30kHz to 60kHz). Gradient

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................400A ● VCES.......................................................... 1200V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controlers, etc

Dual IGBTMOD 400 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from

Dual IGBTMOD??U-Series Module 400 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half bridge configuration with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated fro

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................400A ● VCES ......................................................... 1200V ● Insulated Type ● 2-elements in a pack APPLICATION High frequency switching use (30kHz to 60kHz). Gradient am

Dual IGBTMOD NFH-Series Module 400 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconn

Dual IGBTMOD NFJ-Series Module 400 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-con

Dual IGBTMOD 400 Amperes/1700 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................400A ● VCES.......................................................... 1700V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controlers, etc

Trench Gate Design Dual IGBTMOD??400 Amperes/250 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated fro

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................400A ● VCES ............................................................250V ● Insulated Type ● 2-elements in a pack APPLICATION DC choper, Inverters for battery source

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat s

Dual IGBTMOD 400 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from

Dual IGBTMOD??NF-Series Module 400 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated fro

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................400A ● VCES ............................................................600V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

HIGH POWER SWITCHING USE

● IC ...................................................................400A ● VCES ......................................................... 1200V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................400A ● VCES ......................................................... 1700V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

Dual IGBT A-Series Module 400 Amperes/1700 Volts

Description: Powerex IGBT Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the

HIGH POWER SWITCHING USE INSULATED TYPE

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ● IC...................................................................400A ● VCES ....................................................... 2500V ● Insulated Type ● 2-elements in a pack APPLICATION Inverters, Converters, DC c

HIGH POWER SWITCHING USE INSULATED TYPE

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ● IC...................................................................400A ● VCES ....................................................... 2500V ● Insulated Type ● 2-elements in a pack APPLICATION Inverters, Converters, DC c

HIGH POWER SWITCHING USE INSULATED TYPE

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ● IC...................................................................400A ● VCES ....................................................... 3300V ● Insulated Type ● 2-elements in a pack APPLICATION Inverters, Converters, DC c

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ● IC...................................................................400A ● VCES ....................................................... 3300V ● Insulated Type ● 2-elements in a pack APPLICATION Inverters, Converters, DC c

Single IGBTMOD 400 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering si

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering si

Single IGBTMOD 400 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

Single IGBTMOD??A-Series Module 400 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module con sists of one IGBT Transistor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate

HIGH POWER SWITCHING USE INSULATED TYPE

● IC ….………………….…….. 400 A ● VCES ……………..…...….. 1200 V ● Flat base Type Copper (non-plating) base plate No accessory (terminal screw) attach ● RoHS Directive compliant APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc.

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering si

Single IGBTMOD 400 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering si

Single IGBTMOD 400 Amperes/1400 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast-recovery free-wheel diode. All components and interconnects are isolated from the heat sinking base plate, offering s

Single IGBTMOD 400 Amperes/1700 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

Single IGBTMOD??HVIGBT 400 Amperes/4500 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified syste

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

HIGH POWER SWITCHING USE INSULATED TYPE ● IC...................................................................400A ● VCES ....................................................... 4500V ● Insulated Type ● 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

HIGH POWER SWITCHING USE INSULATED TYPE ● IC...................................................................400A ● VCES ....................................................... 3300V ● High Insulated Type ● 1-element in a Pack ● AISiC Baseplate APPLICATION Traction drives, High Reliabi

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................400A ● VCES ......................................................... 1200V ● Insulated Type ● 1-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

Trench Gate Design Single IGBTMOD??400 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse-connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate,

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering si

Single IGBTMOD 400 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse-connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate,

N-Channel Enhancement Mode MOSFET

Features · 40V/60A, RDS(ON)= 4.6mW (max.) @ VGS=10V RDS(ON)= 5.9mW (max.) @ VGS=4.5V · Reliable and Rugged · Lead Free and Green DevicesAvailable (RoHSCompliant) Applications · SMPS Synchronous Rectification · Load Switch · DC-DC Conversion

T-2 Telephone Slide Base - Type 3

T-2 Telephone Slide Base - Type 3 T-2 Miniature Bayonet Base

Telephone Slide,Miniature Bayonet Base

T-2 Telephone Slide Base - Type 3 T-2 Miniature Bayonet Base

Wedge Base

文件：32.02 Kbytes Page：1 Pages

MAGNETIC POWDER CORES

文件：35.7387 Mbytes Page：42 Pages

MAGNETIC POWDER CORES

文件：35.7387 Mbytes Page：42 Pages

Toroidal Surface Mount Inductors

10W - 33KV SINGLEOUTPUT DC / DC INDUSTRIAL

NOR GATE

Dual 3-input NOR gate and inverter

Dual 3-input NOR gate and inverter

Dual 3-input NOR gate and inverter

COMPLEMENTARY METAL OXIDE SILICON

DUAL THREE INPUT NOR GATE PLUS INVERTER