ESD Protection Array

This ESD Protector features low I/O capacitance at 5 pF at 0 V, and in-system ESD protection to ±8 kV contact discharge, per the IEC 61000-4-2 international standard.\n \n\n技术文档及设计资源\n\n\n技术文档及设计资源\n-->\n\n\n数据表 (1) \n\n\n封装图纸 (1)

3-5串可充电锂电池保护IC（二级保护用）

CM1250/CM1270/12A0/CM1255 系列产内置高精度的电压检测电路和延迟电路，是专用于2~10串可充电电池组的二级保护芯片。通过检测每一节电池的电压，为电池包提供过充保护。CM1251/CM1261/CM1273/CM12A3/CM12D3系列产品内置高精度的电压检测电路和延迟电路，是专用于5~13串可充电电池组的二级保护芯片，通过检测电池的电压，温度等信息，为电池包提供过充保护、过放保护和温度保护，所有保护延时均内置。CM1236/CM1246/CM1247系列产内置高精度的电压检测电路和延迟电路，专用于3~4串可充电电池组的二级保护芯片，通过检测每一节电池电压，为电池包提供

Low Capacitance Transient Voltage Suppressors

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Low Capacitance Transient Voltage Suppressors / ESD Protectors

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Low Capacitance Transient Voltage Suppressors

文件：103.59 Kbytes Page：4 Pages

封装/外壳：6-UFDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TVS DIODE 8.5VC 6UDFN 电路保护 TVS - 二极管

Low Capacitance Transient Voltage Suppressors

文件：103.59 Kbytes Page：4 Pages

电池次级保护芯片

10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Very low noise figure ● High transition frequency fT = 12 GHz ● Excellent large signal behaviour Applications     For low noise applicatins such as power amplifiers, mixers and oscillators in analogue and digital TV–systems (e.g. satellite tuners) up to mi

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Very low noise figure ● High transition frequency fT = 12 GHz ● Excellent large signal behaviour Applications     For low noise applicatins such as power amplifiers, mixers and oscillators in analogue and digital TV–systems (e.g. satellite tuners) up to mi

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Very low noise figure ● High transition frequency fT = 12 GHz ● Excellent large signal behaviour Applications     For low noise applicatins such as power amplifiers, mixers and oscillators in analogue and digital TV–systems (e.g. satellite tuners) up to mi

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Very low noise figure ● High transition frequency fT = 12 GHz ● Excellent large signal behaviour Applications     For low noise applicatins such as power amplifiers, mixers and oscillators in analogue and digital TV–systems (e.g. satellite tuners) up to mi