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CM10-12A晶体管资料

  • CM10-12A别名:CM10-12A三极管、CM10-12A晶体管、CM10-12A晶体三极管

  • CM10-12A生产厂家:美国空间功率电子学公司

  • CM10-12A制作材料:Si-NPN

  • CM10-12A性质:超高频/特高频 (UHF)_功率放大 (L)

  • CM10-12A封装形式:贴片封装

  • CM10-12A极限工作电压:36V

  • CM10-12A最大电流允许值:2.5A

  • CM10-12A最大工作频率:470MHZ

  • CM10-12A引脚数:3

  • CM10-12A最大耗散功率:35W

  • CM10-12A放大倍数

  • CM10-12A图片代号:H-99

  • CM10-12Avtest:36

  • CM10-12Ahtest:470000000

  • CM10-12Aatest:2.5

  • CM10-12Awtest:35

  • CM10-12A代换 CM10-12A用什么型号代替

型号 功能描述 生产厂家 企业 LOGO 操作

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VHB10-12F is Designed for 12.5 V, Class C Applications up to 175 MHz. FEATURES: • Common Emitter • PG = 10 dB at 10 W/175 MHz • Omnigold™ Metalization System

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VHB10-12S is Designed for 12.5 V, High Band Application. FEATURES: • Common Emitter • PG = 10 dB at 10 W/175 MHz • Omnigold™ Metalization System

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VLB10-12F is Designed for 12.5 V, Large Signal Class C Amplifier Applications up to 50 MHz. FEATURES: • Common Emitter • PG = 16 dB at 10 W/50 MHz • Omnigold™ Metalization System

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VLB10-12S is Designed for 12.5 V, Large Signal Class C Amplifier Applications up to 50 MHz. FEATURES: • Common Emitter • PG = 16 dB at 10 W/50 MHz • Omnigold™ Metalization System

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VMB10-12Sis Designed for 12.5 V, Medium Band Class C Application. FEATURES: • Common Emitter • PG= 13 dB at 10W/88MHz • Omnigold™ Metalization System

ASI

更新时间:2026-5-20 17:02:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VITEC
23+
SIP
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
26+
N/A
48000
一级代理-主营优势-实惠价格-不悔选择

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