GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz)

GaAs FET *Power amplifier for mobile phones *For frequencies up to 3 GHz *Operating voltage range: 2 to 6 V *POUT at VD=3V, f=1.8GHz typ. 23.5 dBm *High efficiency better 55

HiRel C-Band GaAs Power-MESFET

HiRelC-Band GaAs Power-MESFET • HiRelDiscrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 8 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application • Power added efficiency > 5

HiRel C-Band GaAs Power-MESFET

HiRelC-Band GaAs Power-MESFET • HiRelDiscrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 8 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application • Power added efficiency > 5

HiRel C-Band GaAs Power-MESFET

HiRelC-Band GaAs Power-MESFET • HiRelDiscrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 8 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application • Power added efficiency > 5

HiRel C-Band GaAs Power-MESFET

HiRelC-Band GaAs Power-MESFET • HiRelDiscrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 8 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application • Power added efficiency > 5

High-Power Packaged GaAs FET

文件：109.54 Kbytes Page：8 Pages