SURFACE MOUNT LOW LEAKAGE SILICON DIODE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL457A, CLL459A types are silicon planar diodes, manufactured in a hermetically sealed glass surface mount package, designed for low leakage applications.

HIGH SPEED SILICON DIODES

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SURFACE MOUNT LOW LEAKAGE SILICON DIODE

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0.500W Mini-MELF Switching Diode , 175.0V Vr, 0.020uA Ir, 0.90V Vf @ 50mA If

封装/外壳：DO-213AC，MINI-MELF，SOD-80 包装：散装 描述：TRANSISTOR 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-213AC，MINI-MELF，SOD-80 包装：散装 描述：TRANSISTOR 分立半导体产品 二极管 - 整流器 - 单

NPN high-voltage transistors

DESCRIPTION NPN transistors in a TO-126; SOT32 plastic package. FEATURES • Low current (max. 100 mA) • High voltage (max. 300 V). APPLICATIONS • Intended for video output stages in black-and-white and in colour television receivers.

HIGH VOLTAGE VIDEO AMPLIFIERS

丝印代码：459；450V SILICON NPN HIGH VOLTAGE SWITCHING TRANSISTOR

Summary V(BR)CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use in hi

450V SILICON NPN HIGH VOLTAGE SWITCHING TRANSISTOR

Summary V(BR)CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use in hi

N-Channel Silicon JFET Transistor AF Amplifier/Chopper/Switch

N–Channel Silicon JFET Transistor AF Amplifier/Chopper/Switch