CLB技术资料参数威世科技原装现货专卖Vishay-IC资料网

您好,欢迎来到114ic资料网！

114ic电子网登录注册

芯片资料

芯片资料
库存查询
行业新闻
生产厂家
替换型号
晶体管

CLB价格

参考价格：￥344.6150

型号：CLB.M19.GLLG 品牌：LEMO 备注：这里有CLB多少钱，2024年最近7天走势，今日出价，今日竞价，CLB批发/采购报价，CLB行情走势销售排行榜，CLB报价。

型号	功能描述	生产厂家&企业
CLB	Wire Bondable Thin Film Resistor Arrays FEATURES •Wirebondable •Upto12equalvalueresistors •ForcaseseePartDimensionstable •Resistancerange:20Ωto1MΩ •ExcellentTCRtracking •Resistormaterial: tantalumnitride,self-passivating •Oxidizedsiliconsubstrateforgoodpower dissipation •Customvaluesandpad	VishayVishay Siliconix 威世科技
CLB0330000BBCG	Wire Bondable Thin Film Resistor Arrays FEATURES •Wirebondable •Upto12equalvalueresistors •ForcaseseePartDimensionstable •Resistancerange:20Ωto1MΩ •ExcellentTCRtracking •Resistormaterial: tantalumnitride,self-passivating •Oxidizedsiliconsubstrateforgoodpower dissipation •Customvaluesandpad	VishayVishay Siliconix 威世科技
CLB0330000BBEG	Wire Bondable Thin Film Resistor Arrays FEATURES •Wirebondable •Upto12equalvalueresistors •ForcaseseePartDimensionstable •Resistancerange:20Ωto1MΩ •ExcellentTCRtracking •Resistormaterial: tantalumnitride,self-passivating •Oxidizedsiliconsubstrateforgoodpower dissipation •Customvaluesandpad	VishayVishay Siliconix 威世科技
CLB0330000BFCG	Wire Bondable Thin Film Resistor Arrays FEATURES •Wirebondable •Upto12equalvalueresistors •ForcaseseePartDimensionstable •Resistancerange:20Ωto1MΩ •ExcellentTCRtracking •Resistormaterial: tantalumnitride,self-passivating •Oxidizedsiliconsubstrateforgoodpower dissipation •Customvaluesandpad	VishayVishay Siliconix 威世科技
CLB0330000BFEG	Wire Bondable Thin Film Resistor Arrays FEATURES •Wirebondable •Upto12equalvalueresistors •ForcaseseePartDimensionstable •Resistancerange:20Ωto1MΩ •ExcellentTCRtracking •Resistormaterial: tantalumnitride,self-passivating •Oxidizedsiliconsubstrateforgoodpower dissipation •Customvaluesandpad	VishayVishay Siliconix 威世科技
CLB0330000BNEG	Wire Bondable Thin Film Resistor Arrays FEATURES •Wirebondable •Upto12equalvalueresistors •ForcaseseePartDimensionstable •Resistancerange:20Ωto1MΩ •ExcellentTCRtracking •Resistormaterial: tantalumnitride,self-passivating •Oxidizedsiliconsubstrateforgoodpower dissipation •Customvaluesandpad	VishayVishay Siliconix 威世科技
CLB0330000CBCG	Wire Bondable Thin Film Resistor Arrays FEATURES •Wirebondable •Upto12equalvalueresistors •ForcaseseePartDimensionstable •Resistancerange:20Ωto1MΩ •ExcellentTCRtracking •Resistormaterial: tantalumnitride,self-passivating •Oxidizedsiliconsubstrateforgoodpower dissipation •Customvaluesandpad	VishayVishay Siliconix 威世科技
CLB0330000CBEG	Wire Bondable Thin Film Resistor Arrays FEATURES •Wirebondable •Upto12equalvalueresistors •ForcaseseePartDimensionstable •Resistancerange:20Ωto1MΩ •ExcellentTCRtracking •Resistormaterial: tantalumnitride,self-passivating •Oxidizedsiliconsubstrateforgoodpower dissipation •Customvaluesandpad	VishayVishay Siliconix 威世科技
CLB0330000CFCG	Wire Bondable Thin Film Resistor Arrays FEATURES •Wirebondable •Upto12equalvalueresistors •ForcaseseePartDimensionstable •Resistancerange:20Ωto1MΩ •ExcellentTCRtracking •Resistormaterial: tantalumnitride,self-passivating •Oxidizedsiliconsubstrateforgoodpower dissipation •Customvaluesandpad	VishayVishay Siliconix 威世科技
CLB0330000CFEG	Wire Bondable Thin Film Resistor Arrays FEATURES •Wirebondable •Upto12equalvalueresistors •ForcaseseePartDimensionstable •Resistancerange:20Ωto1MΩ •ExcellentTCRtracking •Resistormaterial: tantalumnitride,self-passivating •Oxidizedsiliconsubstrateforgoodpower dissipation •Customvaluesandpad	VishayVishay Siliconix 威世科技
CLB0330000CNEG	Wire Bondable Thin Film Resistor Arrays FEATURES •Wirebondable •Upto12equalvalueresistors •ForcaseseePartDimensionstable •Resistancerange:20Ωto1MΩ •ExcellentTCRtracking •Resistormaterial: tantalumnitride,self-passivating •Oxidizedsiliconsubstrateforgoodpower dissipation •Customvaluesandpad	VishayVishay Siliconix 威世科技
CLB0330000DBCG	Wire Bondable Thin Film Resistor Arrays FEATURES •Wirebondable •Upto12equalvalueresistors •ForcaseseePartDimensionstable •Resistancerange:20Ωto1MΩ •ExcellentTCRtracking •Resistormaterial: tantalumnitride,self-passivating •Oxidizedsiliconsubstrateforgoodpower dissipation •Customvaluesandpad	VishayVishay Siliconix 威世科技
CLB0330000DBEG	Wire Bondable Thin Film Resistor Arrays FEATURES •Wirebondable •Upto12equalvalueresistors •ForcaseseePartDimensionstable •Resistancerange:20Ωto1MΩ •ExcellentTCRtracking •Resistormaterial: tantalumnitride,self-passivating •Oxidizedsiliconsubstrateforgoodpower dissipation •Customvaluesandpad	VishayVishay Siliconix 威世科技
CLB0330000DFCG	Wire Bondable Thin Film Resistor Arrays FEATURES •Wirebondable •Upto12equalvalueresistors •ForcaseseePartDimensionstable •Resistancerange:20Ωto1MΩ •ExcellentTCRtracking •Resistormaterial: tantalumnitride,self-passivating •Oxidizedsiliconsubstrateforgoodpower dissipation •Customvaluesandpad	VishayVishay Siliconix 威世科技
CLB0330000DFEG	Wire Bondable Thin Film Resistor Arrays FEATURES •Wirebondable •Upto12equalvalueresistors •ForcaseseePartDimensionstable •Resistancerange:20Ωto1MΩ •ExcellentTCRtracking •Resistormaterial: tantalumnitride,self-passivating •Oxidizedsiliconsubstrateforgoodpower dissipation •Customvaluesandpad	VishayVishay Siliconix 威世科技
CLB0330000DNEG	Wire Bondable Thin Film Resistor Arrays FEATURES •Wirebondable •Upto12equalvalueresistors •ForcaseseePartDimensionstable •Resistancerange:20Ωto1MΩ •ExcellentTCRtracking •Resistormaterial: tantalumnitride,self-passivating •Oxidizedsiliconsubstrateforgoodpower dissipation •Customvaluesandpad	VishayVishay Siliconix 威世科技
CLB0330000FBCG	Wire Bondable Thin Film Resistor Arrays FEATURES •Wirebondable •Upto12equalvalueresistors •ForcaseseePartDimensionstable •Resistancerange:20Ωto1MΩ •ExcellentTCRtracking •Resistormaterial: tantalumnitride,self-passivating •Oxidizedsiliconsubstrateforgoodpower dissipation •Customvaluesandpad	VishayVishay Siliconix 威世科技
CLB0330000FBEG	Wire Bondable Thin Film Resistor Arrays FEATURES •Wirebondable •Upto12equalvalueresistors •ForcaseseePartDimensionstable •Resistancerange:20Ωto1MΩ •ExcellentTCRtracking •Resistormaterial: tantalumnitride,self-passivating •Oxidizedsiliconsubstrateforgoodpower dissipation •Customvaluesandpad	VishayVishay Siliconix 威世科技
CLB0330000FFCG	Wire Bondable Thin Film Resistor Arrays FEATURES •Wirebondable •Upto12equalvalueresistors •ForcaseseePartDimensionstable •Resistancerange:20Ωto1MΩ •ExcellentTCRtracking •Resistormaterial: tantalumnitride,self-passivating •Oxidizedsiliconsubstrateforgoodpower dissipation •Customvaluesandpad	VishayVishay Siliconix 威世科技
CLB0330000FFEG	Wire Bondable Thin Film Resistor Arrays FEATURES •Wirebondable •Upto12equalvalueresistors •ForcaseseePartDimensionstable •Resistancerange:20Ωto1MΩ •ExcellentTCRtracking •Resistormaterial: tantalumnitride,self-passivating •Oxidizedsiliconsubstrateforgoodpower dissipation •Customvaluesandpad	VishayVishay Siliconix 威世科技
CLB0330000FNEG	Wire Bondable Thin Film Resistor Arrays FEATURES •Wirebondable •Upto12equalvalueresistors •ForcaseseePartDimensionstable •Resistancerange:20Ωto1MΩ •ExcellentTCRtracking •Resistormaterial: tantalumnitride,self-passivating •Oxidizedsiliconsubstrateforgoodpower dissipation •Customvaluesandpad	VishayVishay Siliconix 威世科技
CLB055C0R3B1000TC1	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB055C0R3B1000TC1_V01	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB055C0R4B1000TC1	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB055C0R4B1000TC1_V01	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB055C0R5B1000TC1	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB055C0R5B1000TC1_V01	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB055C0R6B1000TC1	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB055C0R6B1000TC1_V01	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB056U0R7K3000TC1	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB056U0R7K3000TC1_V01	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB056U1R0K1000TC1	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB056U1R0K1000TC1_V01	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB056U1R1K1000TC1	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB056U1R1K1000TC1_V01	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB056U1R2K1000TC1	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB056U1R2K1000TC1_V01	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB056U1R3K1000TC1	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB056U1R3K1000TC1_V01	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB056U1R5K1000TC1	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB056U1R5K1000TC1_V01	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB056U1R6K1000TC1	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB056U1R6K1000TC1_V01	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB056U1R8K1000TC1	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB056U1R8K1000TC1_V01	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB056U2R0K1000TC1	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB056U2R0K1000TC1_V01	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB056U2R2K1000TC1	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB056U2R2K1000TC1_V01	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB056U2R4K1000TC1	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB056U2R4K1000TC1_V01	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB05B5220K1000TC1	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB05B5220K1000TC1_V01	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB05B5240K1000TC1	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB05B5240K1000TC1_V01	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB05B5270K1000TC1	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB05B5270K1000TC1_V01	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB05B5300K1000TC1	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB05B5300K1000TC1_V01	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所
CLB05B5330K1000TC1	Microwave Integrated Circuits 1.Finegrainedhigh-densityceramicdielectric,pure goldelectrodeandsimplesinglelayerstructure provideveryreliableperformanceandexcellent frequencycharacteristics. 2.Awideselectionofsizesfromveryminiature 0.25mmsquareissuitedtohigh-densitymounting. 3.Forcompatib	MURATA1Murata Manufacturing Co., Ltd 村田村田制作所

CLB产品属性

类型
描述
型号
CLB
制造商
VCC
功能描述
5mm Lens Low Profile

CLB供应商更多...

更新时间：2024-5-29 20:20:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市威雅利发展有限公司	CLB1108-4-50TR-R	EATON	17+/18+	贴片电感	201	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市明嘉莱科技有限公司	CLB1000	CORELOGIC	09+	ROHS	880000	明嘉莱只做原装正品现货	询价
深圳市汇莱威科技有限公司	CLB1108-3-50TR-R		COOPER	SMD	68900	原包原标签100%进口原装常备现货!	询价
深圳市弘扬芯城科技有限公司	CLB40I1200PZ-TUB	IXYS	23+	TO263HV	6000	诚信服务，绝对原装原盘	询价
标准国际(香港)有限公司	CLB-307-12	General Devices			2	公司优势库存热卖中!!	询价
深圳市艾宇特电子科技有限公司	CLB1108-4-50TR-R	EATON	2102+		6854	只做原厂原装正品假一赔十!	询价
深圳市振宏微科技有限公司	CLB300CTP		23+	NA	5000	专做原装正品,假一罚百!	询价
中天科工半导体（深圳）有限公司	CLB80AB60	SANREX	专业模块	MODULE	8513	模块原装主营-可开原型号增税票	询价
深圳市博科胜电子有限公司	CLB2305	HXHL	22+	SOP8	8900	全新正品现货有挂就有现货	询价
深圳市高捷芯城科技有限公司	CLB30I1200PZ-TRL	Littelfuse/IXYS	23+	TO-263	1471	原厂订货渠道,支持BOM配单一站式服务	询价

CLB芯片相关品牌

CLB规格书下载地址

CLB参数引脚图相关

CLB数据表相关新闻

CLC006AJE
CLC006AJENATIONALSEMICONDUCTOR20+标准封装 CM8062000911406INTEL20+标准封装 COMP-6DIDANTONAINDUSTRIES20+标准封装 CS5361-KZZCIRRUSLOGIC20+标准封装 CT622LYF-820KCENTRALTECHNOLOGIES20+标准封装 C-13-155-T3-SSC7C-G5LUMINENT/OIC20+标准封装 C15505-0001375BOTHER20+标准封装 C15509-0
2021-6-5
CLA50E1200HB
CLA50E1200HB，全新原装当天发货或门市自取0755-82732291.
2020-6-25
CL3501OR
CL3501OR
2019-12-7
CLA30MT1200NPZ
深圳科雨电子有限公司，联系人：卢小姐手机：18975515225 原装正品大量现货，有需要的可以联系我QQ:97877805微信：wei555222777
2019-5-17
CLM285-12-微功耗电压基准二极管
产品说明该CLM285/385-1.2为微2端子带隙稳压二极管。操作在宽电流范围为10mA与低动态阻抗和20mA的稳定温度特性。Calogic利用片上修剪提供严格的电压公差。这些设备都是优秀的便携式仪表，监管机构或通用模拟电路与电池寿命接近保质期。订购信息零件包装最大温度系数（ppm）温度范围CLM285Y1SOIC封装100-40oC至+85oC的CLM385T1TO-46100
2013-3-24
CLM2931-低压差稳压器
产品说明该CLM2931是一个积极的低功率电压调节器。这设备是在使用电池供电的理想选择应用，如无绳电话，无线电控制系统和便携式电脑。该CLM2931功能非常低静态电流（0.4毫安）和非常低的输出电压下降（典型值在轻负载为100mA时为300mV和50mV的）。其他功能包括开/关输入，使逻辑兼容稳压器接通和关闭。该稳压器输出电压可在内部接脚绑为5V，3V，3.3V，3.5V，4.0V，4.5V或3V至编程24V与外部电阻对。使用Calogic的设计，工艺和检测技术使CLM2931优超过同类产品。...特点·5V，3.3V，3.5V，4
2013-1-31

您好,欢迎来到114ic资料网！

CLB价格

CLB产品属性

CLB供应商更多...

CLB芯片相关品牌

CLB规格书下载地址

CLB参数引脚图相关

CLB数据表相关新闻

CLC006AJE

CLA50E1200HB

CL3501OR

CLA30MT1200NPZ

CLM285-12-微功耗电压基准二极管

CLM2931-低压差稳压器

DdatasheetPDF页码索引