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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CJT1201R2JJ | 封装/外壳：矩形外壳 包装：散装 描述：RES CHAS MNT 1.2 OHM 5% 120W 电阻器 底座安装电阻器 | TEConnectivityPassiveProductTE Connectivity Passive Product TE Connectivity Passive ProductTE ConnectivityPassiveProduct |  |   |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage- :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. POWERMOS7™ PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesalongwit | ADPOW Advanced Power Technology |  | | |
POWERMOS7FREDFET 文件：161.92 Kbytes Page：5 Pages | ADPOW Advanced Power Technology | | | |
POWERMOS7RFREDFET 文件：375.54 Kbytes Page：5 Pages | ADPOW Advanced Power Technology | | | |
POWERMOS7RFREDFET 文件：375.54 Kbytes Page：5 Pages | ADPOW Advanced Power Technology | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CHINT |
2308+ |
172776 |
一级代理,原装正品,公司现货! |
||||
TE |
20+ |
电阻器 |
93 |
就找我吧!--邀您体验愉快问购元件! |
CJT1201R2JJ芯片相关品牌
CJT1201R2JJ规格书下载地址
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2020-12-25CKRF2179MM26-C4
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2020-10-29
DdatasheetPDF页码索引
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