20-30GHz Low Noise Amplifier

Description The CHA2093 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features ■ Broad band performance 20-30GHz ■ 2.

20-30GHz Low Noise Amplifier

文件：97.51 Kbytes Page：8 Pages

20-30GHz Low Noise Amplifier

文件：128.419 Kbytes Page：8 Pages

20-30GHz Low Noise Amplifier

The CHA2093-99F is a two-stage wide band monolithic Low Noise Amplifier.\n The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.\n It is supplied in chip form.\n  

20-30GHz Low Noise Amplifier

Description The CHA2093 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features ■ Broad band performance 20-30GHz ■ 2.

20-30GHz Low Noise Amplifier

Description The CHA2093 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features ■ Broad band performance 20-30GHz ■ 2.

20-30GHz Low Noise Amplifier

Description The monolithic microwave IC (MMIC) in the package is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard PHEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features

20-30GHz Low Noise Amplifier

Description The monolithic microwave IC (MMIC) in the package is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard PHEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features

20-30GHz Low Noise Amplifier

Description The monolithic microwave IC (MMIC) in the package is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard PHEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features

20-30GHz Low Noise Amplifier

文件：97.51 Kbytes Page：8 Pages

20-30GHz Low Noise Amplifier

文件：128.419 Kbytes Page：8 Pages

20-30GHz Low Noise Amplifier

文件：97.51 Kbytes Page：8 Pages

20-30GHz Low Noise Amplifier

文件：97.51 Kbytes Page：8 Pages

20-30GHz Low Noise Amplifier

10-30GHz Frequency Multiplier

Description The CHX2093a is a cascadable by 3 frequency multiplier monolithic circuit. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps to simplify the assembly process. The circuit

Sharpness for Display

Description The CXA2093S is a bipolar IC which performs contour accentuation for display RGB signals. Features • Sharpness time constant selection (50ns/100ns) • Built-in sync separator for sync on green • Differential output pins • Built-in wide-band amplifier (200MHz/–3dB@0.7Vp-p) Applica

Digital Comb Filter (NTSC)

Description The CXD2093Q is an adaptive intra-field three lines comb filter for NTSC systems, and can provide high-precision Y/C separation with a single chip. Features • Adaptive intra-field three lines comb filter • For NTSC • Vertical enhancer • Horizontal aperture correction • 8-bit A/D