LED drive and keyboard control chip

2. Features ● Set display current drive layer internally, the current of segment is no less than 25mA, the current of word is no less than 160mA. ● Display scan control dynamically, support 8×4 or 7×4, directly drive four bits number LED or thirty two LEDs. ● Internal limit current, set eight

数码管驱动及键盘控制芯片

CH455 是数码管显示驱动和键盘扫描控制芯片。CH455内置时钟振荡电路，可以动态驱动4 位数码管或者32 只LED；同时还可以进行28 键的键盘扫描；CH455 通过SCL 和SDA 组成的2 线串行接口与单片机等交换数据。 • 内置显示电流驱动级，段电流不小于25mA，字电流不小于160mA。\n• 动态显示扫描控制，支持8×4 或者7×4，直接驱动4 位数码管或者32 只发光管LED。\n• 内部限流，通过占空比设定提供8 级亮度控制。\n• 内置28 键键盘控制器，基于7×4 矩阵键盘扫描。\n• 内置按键状态输入的下拉电阻，内置去抖动电路。\n• 提供低电平有效的键盘中断，提供按键释放标志位，可供查询按键按下与释放。\n• 高速2 线串行接口，时钟速度从0 到4MHz，兼容两线I2C 总线，节约引脚。\n• 内置上电复位，支持2.7V～5V 电源电压。\n• 支持低功耗睡眠，节约电能，可以被按键唤醒或者被命;

DIgItal Drive and Keyboard Controlled Chip

文件：192.38 Kbytes Page：9 Pages

LED drive and keyboard control chip

2. Features ● Set display current drive layer internally, the current of segment is no less than 25mA, the current of word is no less than 160mA. ● Display scan control dynamically, support 8×4 or 7×4, directly drive four bits number LED or thirty two LEDs. ● Internal limit current, set eight

LED drive and keyboard control chip

2. Features ● Set display current drive layer internally, the current of segment is no less than 25mA, the current of word is no less than 160mA. ● Display scan control dynamically, support 8×4 or 7×4, directly drive four bits number LED or thirty two LEDs. ● Internal limit current, set eight

LED drive and keyboard control chip

2. Features ● Set display current drive layer internally, the current of segment is no less than 25mA, the current of word is no less than 160mA. ● Display scan control dynamically, support 8×4 or 7×4, directly drive four bits number LED or thirty two LEDs. ● Internal limit current, set eight

DIgItal Drive and Keyboard Controlled Chip

文件：192.38 Kbytes Page：9 Pages

DIgItal Drive and Keyboard Controlled Chip

文件：192.38 Kbytes Page：9 Pages

DIgItal Drive and Keyboard Controlled Chip

文件：192.38 Kbytes Page：9 Pages

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.

NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

FEATURES * 140 Volt VCEO * 1 Amp continuous current * Ptot= 500 mW

Linear Output Type OPIC Light Detector

■ Features 1. Liner output 2. Two package according to mounting method Side-view type (IS445) Top-view type (IS455) 3. Capable of output voltage level adjustment due to external resistor ■ Applications 1. Copiers

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon Power Transistor . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 60 Watts Minimum Gain = 13 dB Efficiency = 55

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 140 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt