LED drive and keyboard control chip

2. Features ● Set display current drive layer internally, the current of segment is no less than 25mA, the current of word is no less than 160mA. ● Display scan control dynamically, support 8×4 or 7×4, directly drive four bits number LED or thirty two LEDs. ● Internal limit current, set eight

DIgItal Drive and Keyboard Controlled Chip

文件：192.38 Kbytes Page：9 Pages

数码管驱动及键盘控制芯片

LED drive and keyboard control chip

2. Features ● Set display current drive layer internally, the current of segment is no less than 25mA, the current of word is no less than 160mA. ● Display scan control dynamically, support 8×4 or 7×4, directly drive four bits number LED or thirty two LEDs. ● Internal limit current, set eight

LED drive and keyboard control chip

2. Features ● Set display current drive layer internally, the current of segment is no less than 25mA, the current of word is no less than 160mA. ● Display scan control dynamically, support 8×4 or 7×4, directly drive four bits number LED or thirty two LEDs. ● Internal limit current, set eight

LED drive and keyboard control chip

2. Features ● Set display current drive layer internally, the current of segment is no less than 25mA, the current of word is no less than 160mA. ● Display scan control dynamically, support 8×4 or 7×4, directly drive four bits number LED or thirty two LEDs. ● Internal limit current, set eight

DIgItal Drive and Keyboard Controlled Chip

文件：192.38 Kbytes Page：9 Pages

DIgItal Drive and Keyboard Controlled Chip

文件：192.38 Kbytes Page：9 Pages

DIgItal Drive and Keyboard Controlled Chip

文件：192.38 Kbytes Page：9 Pages

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.

NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

FEATURES * 140 Volt VCEO * 1 Amp continuous current * Ptot= 500 mW

Linear Output Type OPIC Light Detector

■ Features 1. Liner output 2. Two package according to mounting method Side-view type (IS445) Top-view type (IS455) 3. Capable of output voltage level adjustment due to external resistor ■ Applications 1. Copiers

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon Power Transistor . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 60 Watts Minimum Gain = 13 dB Efficiency = 55

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 140 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt