N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 200V , 9A , RDS(ON)=400mΩ @VGS=10V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

丝印代码：630；9A 200V N-channel Enhancement Mode Power MOSFET

1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdso

Fast switching

Features • Fast switching • 100% avalanche tested • Improved dv/dt capability Application • DC Motor Control and Class D Amplifier • Uninterruptible Power Supply (UPS) • Automotive

Fast switching

Features · Fast switching · 100 avalanche tested · Improved dv/dt capability Application · DC Motor Control and Class D Amplifier · Uninterruptible Power Supply (UPS) · Automotive

Low Frequencies

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COMPACT DIGITAL THERMOMETERS & THERMO-HYGROMETERS

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