型号 功能描述 生产厂家 企业 LOGO 操作
CEU85A3

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 25V, 80A, RDS(ON) = 6mΩ @VGS = 10V. RDS(ON) = 9mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

华瑞

CEU85A3

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 25V, 80A, RDS(ON) = 6mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 9mW @VGS = 4.5V. Lead free product is acquired.

CET-MOS

华瑞

CEU85A3

N-Channel Enhancement Mode Field Effect Transistor

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CET

华瑞

CEU85A3

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 25V, 90A, RDS(ON) = 6mΩ @VGS = 10V. RDS(ON) = 9mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-263 & TO-220 package.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 25V, 90A, RDS(ON) = 6mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-263 & TO-220 package. RDS(ON) = 9mW @VGS = 4.5V. Lead free product is acquired.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 25V, 80A, RDS(ON) = 6mΩ @VGS = 10V. RDS(ON) = 9mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 25V, 80A, RDS(ON) = 6mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 9mW @VGS = 4.5V. Lead free product is acquired.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 25V, 90A, RDS(ON) = 6mΩ @VGS = 10V. RDS(ON) = 9mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-263 & TO-220 package.

CET

华瑞

CEU85A3产品属性

  • 类型

    描述

  • 型号

    CEU85A3

  • 制造商

    CET

  • 制造商全称

    Chino-Excel Technology

  • 功能描述

    N-Channel Enhancement Mode Field Effect Transistor

更新时间:2026-3-1 22:22:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NA
24+
N/A
8336
公司现货库存,支持实单
CET
2026+
TO252
1000
原装正品,假一罚十!
台湾华瑞CET
24+
TO252
1820
VBsemi
21+
TO252
10065
一级代理,专注军工、汽车、医疗、工业、新能源、电力
CET
26+
TQFP128
86720
全新原装正品价格最实惠 承诺假一赔百
CET/華瑞
25+
TO-252
156678
明嘉莱只做原装正品现货
CET
23+
TO252
5000
原装正品,假一罚十
CETSEMI
20+
TO-252
63258
原装优势主营型号-可开原型号增税票
CET
23+
TO252
12800
公司只有原装 欢迎来电咨询。
CET/華瑞
2022+
TO-252
32500
原厂代理 终端免费提供样品

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