P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -12A, RDS(ON) = 132mΩ @VGS = -10V. RDS(ON) = 195mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

P Channel MOSFET

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -2.4A, RDS(ON) = 135mΩ @VGS = -10V. RDS(ON) = 180mΩ @VGS = -4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-89 package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -3.5A, RDS(ON) = 125mΩ @VGS = -10V. RDS(ON) = 169mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 3.5 Ampere FEATURE * Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. * Lead free product is acquired. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switchi

8-Bit Microcontroller for Monitor

文件：455.93 Kbytes Page：44 Pages

8-Bit Microcontroller for Monitor

文件：455.93 Kbytes Page：44 Pages