N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 34A, RDS(ON) = 25mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 16A , RDS(ON) = 66mΩ @VGS = 10V. RDS(ON) = 85mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 16A , RDS(ON) = 66mW @VGS = 10V. Super high dense cell design for extremely low RDS( High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 85mW @VGS = 4.5V. Lead free product is acquired.

N Channel MOSFET

Enhanced GSM Processor

GENERAL DESCRIPTION TheAD6426 Enhanced GSM Processor (EGSMP) is the central component of the highly integrated AD20msp425 GSM Chipset. Offering a low total chip count, low bill of materials cost and long talk and standby times, the chipset offers designers a straightforward route to a highly co

Enhanced GSM Processor

GENERAL DESCRIPTION TheAD6426 Enhanced GSM Processor (EGSMP) is the central component of the highly integrated AD20msp425 GSM Chipset. Offering a low total chip count, low bill of materials cost and long talk and standby times, the chipset offers designers a straightforward route to a highly co

Enhanced GSM Processor

GENERAL DESCRIPTION TheAD6426 Enhanced GSM Processor (EGSMP) is the central component of the highly integrated AD20msp425 GSM Chipset. Offering a low total chip count, low bill of materials cost and long talk and standby times, the chipset offers designers a straightforward route to a highly co

22 (7/30) AWG Tinned Copper

文件：415.55 Kbytes Page：5 Pages

22 (7/30) AWG Tinned Copper

文件：415.55 Kbytes Page：5 Pages