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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CEU63A3 | N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 30V, 55A, RDS(ON) = 11mΩ @VGS = 10V. RDS(ON) = 14mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 华瑞 |   | |
CEU63A3 | N-Channel Enhancement Mode Field Effect Transistor | CET 华瑞 | | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 30V, 55A, RDS(ON) = 11mΩ @VGS = 10V. RDS(ON) = 14mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 55 Ampere FEATURE * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. * Small package. (TO-252A) APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. | CHENMKO 力勤 | | ||
N-Channel Enhancement Mode Field Effect Transistor 文件：303.7 Kbytes Page：4 Pages | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor 文件：303.7 Kbytes Page：4 Pages | CET 华瑞 | |
CEU63A3产品属性
- 类型
描述
- 型号
CEU63A3
- 制造商
CET
- 制造商全称
Chino-Excel Technology
- 功能描述
N-Channel Enhancement Mode Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
25+ |
TO-252 |
90000 |
进口原装现货假一罚十价格合理 |
|||
CEN |
23+ |
SOT252 |
7000 |
||||
CET |
26+ |
T0-252 |
38754 |
原装正品渠道商 提供BOM一站式配单服务 |
|||
CET/華瑞 |
25+ |
N/A |
20000 |
只做原装,只有原装。 |
|||
SOT-252 |
25+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
CET |
23+ |
TO252 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
CET |
24+ |
TO252 |
273 |
||||
VBsemi |
25+ |
TO252-3 |
10065 |
原装正品,有挂有货,假一赔十 |
|||
VBsemi |
21+ |
TO252-3 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
AD |
25+ |
TO252 |
3000 |
原盒原标,正品现货 诚信经营 价格美丽 假一罚十 |
CEU63A3规格书下载地址
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DdatasheetPDF页码索引
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