P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -26A, RDS(ON) = 42mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

P-Channel Enhancement Mode Field Effect Transistor

SBE® 320 / SBX® 350 Connectors Up to 550 Amps

SBE® and SBX® connectors can integrate up to 8 auxiliary power / signal contacts along with the two primary power circuits. Sequencing within auxiliary positions is possible using the 4 pin lengths available in the 1x4 auxiliary connector. SBE® and SBX® offer touch safe housings. • Silver Pla

SBE® 320 / SBX® 350 Connectors Up to 550 Amps

SBE® and SBX® connectors can integrate up to 8 auxiliary power / signal contacts along with the two primary power circuits. Sequencing within auxiliary positions is possible using the 4 pin lengths available in the 1x4 auxiliary connector. SBE® and SBX® offer touch safe housings. • Silver Pla

438 PCB Barrier Terminal Strip, 600V

文件：64.8 Kbytes Page：2 Pages

438 PCB Barrier Terminal Strip, 600V

文件：64.8 Kbytes Page：2 Pages

438 PCB Barrier Terminal Strip, 600V

文件：64.8 Kbytes Page：2 Pages