N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 25A , RDS(ON) = 41mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel 6 0-V (D-S) MOSFET

文件：899.28 Kbytes Page：6 Pages

N-Channel MOSFET uses advanced trench technology

文件：2.50717 Mbytes Page：5 Pages

N-Channel Enhancement Mode Field Effect Transistor

USB2.0 SD/MMC Single LUN Card Reader Controller

Description AU6336 is an USB2.0 high-speed transmission controller, which is designed as a bridge between USB and SD compatible flash card interface, such as SD, HS-SD, MMC, HS-MMC, RS-MMC, MMCmicro…etc. AU6336 can read digital contents stored on memory card designed to cover a wide area of app

0.5W Zener Diode

Features Sharp Reverse Characteristics Low Reverse Current Levels High Reliability Gold Back Metal High Reliability Tested Grades.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 28A, RDS(ON) = 40mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 25A , RDS(ON) = 41mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel 60 V (D-S) MOSFET

文件：972.45 Kbytes Page：7 Pages