N-Channel Enhancement Mode Field Effect Transistor

FEATURES 200V, 7.5A, RDS(ON) = 0.36W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

N Channel MOSFET

N-Channel Enhancement Mode Field Effect Transistor

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N-Channel MOSFET uses advanced trench technology

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SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

SCHOTTKY BARRIER RECTIFIERS 6 AMPERES 20 TO 60 VOLTS . . . in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Extremely Fast Switching • Extremely Low Forward Drop • Platinum Barrier with Avalanche Guardrings • Gua

Silicon Rectifier Fast Recovery, Dual, Center Tap

Description: The NTE629 and NTE630 are dual, fast recovery silicon rectifiers in a TO220 type package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers and low RF interference. Features: ● Low Forward Voltage ● High Current Capabil

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SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 60 Volts CURRENT - 6 Ampere)

VOLTAGE 20 to 60 Volts CURRENT 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency.

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