N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 28A, RDS(ON) = 23mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 30.6A, RDS(ON) = 20mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 25mW @VGS = 4.5V.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 33A, RDS(ON) = 23mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 33A, RDS(ON) = 20mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 25mW @VGS = 4.5V.

Precision Potentiometer / Position Sensor

文件：417.4 Kbytes Page：3 Pages

0.5A Dual USB High-Side Power Switch

文件：222.45 Kbytes Page：9 Pages

High-Speed USB 2.0 (480 Mbps) DPDT Switch

文件：518.88 Kbytes Page：10 Pages