P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -9A, RDS(ON) = 200mΩ @VGS = -10V. RDS(ON) = 320mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

P Channel MOSFET

High Speed Power Supplies

• Optimized for battery-powered device testing • Ultra-fast transient response to load changes • 5A continuous output • Pulse peak, average, and baseline current measurements • 100nA DC current sensitivity MODEL 2304A • 100W output (20V @ 5A) • Sinks up to 3A MODEL 2303 • 45W output (

High Speed Power Supplies

• Optimized for battery-powered device testing • Ultra-fast transient response to load changes • 5A continuous output • Pulse peak, average, and baseline current measurements • 100nA DC current sensitivity MODEL 2304A • 100W output (20V @ 5A) • Sinks up to 3A MODEL 2303 • 45W output (

Raspberry Pi Model B / Pi 2 / Pi 3 Case Lid - Purple

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Insert Molded Coil

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High Current Toroid Inductors

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