N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 700V, 0.8A, RDS(ON) = 18 Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 700V, 0.8A, RDS(ON) = 18 W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

N Channel MOSFET

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 700V, 0.8A, RDS(ON) = 18 Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 700V, 0.8A, RDS(ON) = 18 W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 700V, 0.3A, RDS(ON) = 18 Ω @VGS = 10V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ TO-92(Bulk) & TO-92(Ammopack) package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 700V, 0.3A, RDS(ON) = 18 W @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TO-92(Bulk) & TO-92(Ammopack) package. Lead free product is acquired.