N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 0.28A, RDS(ON) = 2Ω @VGS = 10V. RDS(ON) = 3Ω @VGS = 5V. ■ High dense cell design for low RDS(ON). ■ Rugged and reliable. ■ SOT-23package.

N-Channel Enhancement Mode Field Effect Transistor

1.8GHz THREE GAIN LEVEL LNA

DESCRIPTION The STB7002 is a Silicon monolithic amplifier, that offers low noise figure and three gain levels for 1.8GHz applications. STB7002 is housed in a small industry-standard MSOP8-EP surface mount package, requiring very little board space (50 reduction vs SO8 Package). MSOP8-EP dimensi

Integrated Circuit Switched Mode Power Supply Control

Description: The NTE7002 is a bipolar integrated circuit in a 9–Lead SIP type package that drives, regulates, and monitors the switching transistor in a power supply based on the ringing choke flyback principle. Due to the wide regulating range and the high voltage stability during large loa

1.8GHz THREE GAIN LEVEL LNA

DESCRIPTION The STB7002 is a Silicon monolithic amplifier, that offers low noise figure and three gain levels for 1.8GHz applications. STB7002 is housed in a small industry-standard MSOP8-EP surface mount package, requiring very little board space (50 reduction vs SO8 Package). MSOP8-EP dimensi

LOW VOLTAGE C-MOS OPERATIONAL AMPLIFIER

文件：182.86 Kbytes Page：6 Pages

LOW VOLTAGE C-MOS OPERATIONAL AMPLIFIER

文件：182.86 Kbytes Page：6 Pages