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型号 功能描述 生产厂家 企业 LOGO 操作
CEP93A3A

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 150A, RDS(ON) = 3.0 mW @VGS = 10V. RDS(ON) = 6.0 mW @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

CET

华瑞

N-Channel MOSFET uses advanced trench technology

文件:1.68067 Mbytes Page:5 Pages

DOINGTER

杜因特

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 150A, RDS(ON) = 3.0 mW @VGS = 10V. RDS(ON) = 6.0 mW @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 125A, RDS(ON) = 3.2mΩ @VGS = 10V. RDS(ON) = 7.0mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 125A, RDS(ON) = 3.2mΩ @VGS = 10V. RDS(ON) = 7.0mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

华瑞

CEP93A3A产品属性

  • 类型

    描述

  • BVDSS(V):

    30

  • Rds(on)mΩ@10V:

    3

  • Rds(on)mΩ@4.5V:

    4

  • ID(A):

    124

  • Qg(nC)@4.5V(typ):

    38

  • RθJC(℃/W):

    1.8

  • Pd(W):

    83

  • Configuration:

    Single

  • Polarity:

    N

更新时间:2026-5-14 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CET
23+
NA
6500
全新原装假一赔十
CET
20+
TO-220
36900
原装优势主营型号-可开原型号增税票
CET
23+
TO220/3
7000
绝对全新原装!100%保质量特价!请放心订购!
CET
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
SUMIDA
23+
SMD
880000
明嘉莱只做原装正品现货
SUMIDA
25+
SMD8
2062
原装正品优势渠道
CET
24+
TO2203
636
CET
22+
TO-220
2000
原装现货库存.价格优势!!
CET
17+
TO-220
6200
CET/華瑞
24+
84000
只做原装进口现货

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