N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.

N Channel MOSFET

Silicon epitaxial planar type

Silicon epitaxial planar type For super high speed switching For small current rectification ■ Features • Two MA3X721 (MA721) is contained in one package (series connection) • Forward current (Average) IF(AV) = 200 mA (per single diode) rectification is possible

Integrated Circuit Audio Power Amp, 2W

Description: TheNTE740A is an Audio Power Amplifier in a 14–Lead DIP type package designed for minimal external component requirements. Features: ● Low Distortion ● Low Quiescent Current ● 34dB Internally Fixed Gain ● High Input Impedance ● Thermal Overload Protection ● Output Short Circui

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Schottky rectifier diodes in a surface mounting plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal c

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Schottky rectifier diodes in a surface mounting plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal c

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. FEATURES • Low forward volt drop • Fast switching • Reverse surge capabil