N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. ■ Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.

N-Channel Enhancement Mode Field Effect Transistor

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740/741 High Displacement Threaded Diaphragm Seal

FEATURES „ Large diaphragm provides ample displacement for inches of water ranges „ Ideal for high static, low differential pressure applications

GROMMETS , BUSHINGS

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Wiha Quality Tools Slotted Bits

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CONTROL B횁SICO Y ECON횙MICO DEL RELOJ FECHADOR ELECTR횙NICO

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丝印代码：740；10A 400V N-channel Enhancement Mode Power MOSFET

文件：1.67134 Mbytes Page：12 Pages