N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 55V, 75A, RDS(ON) = 13mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 55V, 75A, RDS(ON) = 13mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

This series of detectors can detect fixed voltages from 2.2V to 7V.

Low power consumption, typical value: 2.0uA Wide operating voltage range: 1.5V～12V Low temperature drift detection voltage: typical value ±50pp m/℃ Built-in hysteresis feature High-precision voltage value detection: ±3 Small package: SOT89-3, TO92, SOT23-3

LED SPACER MOUNTS

[KEYSTONE] “UNIVERSAL” FOR T-1 & T-1 3/4 • Unique design separates leads and retains Tri-Lead and Bi-Lead components. • Designed for PC board mounting of Tri-Lead and Bi-Lead T-1 and T-1 3/4 LEDS • Provides height control, lead retention and stability. • Also suitable for mounting lamps

LED SPACER MOUNTS

[KEYSTONE] “UNIVERSAL” FOR T-1 & T-1 3/4 • Unique design separates leads and retains Tri-Lead and Bi-Lead components. • Designed for PC board mounting of Tri-Lead and Bi-Lead T-1 and T-1 3/4 LEDS • Provides height control, lead retention and stability. • Also suitable for mounting lamps

Micro reflex sensor

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B - Indoor keyed

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