N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■55V,75A,RDS(ON)=13mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■55V,75A,RDS(ON)=13mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

Thisseriesofdetectorscandetectfixedvoltagesfrom2.2Vto7V.

Lowpowerconsumption,typicalvalue:2.0uA Wideoperatingvoltagerange:1.5V～12V Lowtemperaturedriftdetectionvoltage:typicalvalue±50ppm/℃ Built-inhysteresisfeature High-precisionvoltagevaluedetection:±3 Smallpackage: SOT89-3,TO92,SOT23-3

LEDSPACERMOUNTS

[KEYSTONE] “UNIVERSAL”FORT-1&T-13/4 •UniquedesignseparatesleadsandretainsTri-LeadandBi-Leadcomponents. •DesignedforPCboardmountingofTri-LeadandBi-LeadT-1andT-13/4LEDS •Providesheightcontrol,leadretentionandstability. •Alsosuitableformountinglamps

LEDSPACERMOUNTS

[KEYSTONE] “UNIVERSAL”FORT-1&T-13/4 •UniquedesignseparatesleadsandretainsTri-LeadandBi-Leadcomponents. •DesignedforPCboardmountingofTri-LeadandBi-LeadT-1andT-13/4LEDS •Providesheightcontrol,leadretentionandstability. •Alsosuitableformountinglamps

Microreflexsensor

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B-Indoorkeyed

文件：141.45 Kbytes Page：4 Pages