N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 100A, RDS(ON) = 6.2mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 100A, RDS(ON) = 6.2mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead-free plating ; RoHS compliant.

N Channel Product

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 100A, RDS(ON) = 6.2mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 9.0mW @VGS = 4.5V.

N Channel MOSFET

Teck90 1000V, 3G C #68 Str BC, XLPE Ins M4, PVC Jkt, SIA Armor, Blk PVC Jkt, CSA HL SUN RES -40C

Product Description Teck90 1000V, 3+G Conductor 6+8AWG (7x14H) Bare Copper, XLPE Insulation M4 Color Code, PVC Inner Jacket, Steel Interlock Armor, Black PVC Outer Jacket, CSA HL SUN RES -40C

EXTENSION SPRINGS

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SINGLE POLE, THREE THROW CONNECTORIZED SWITCHES

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TEST JACKS

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Component1 6 X 1 PAIR

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